fqa9n90 Fairchild Semiconductor, fqa9n90 Datasheet
fqa9n90
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fqa9n90 Summary of contents
Page 1
... C) C Parameter March 2001 1 DS(on FQA9N90 Units 900 8.6 5.45 34.4 30 900 mJ 8 4.0 V/ns 240 1.92 W/°C -55 to +150 300 Typ Max Units -- 0.52 °C/W 0.24 -- °C °C/W Rev. A, March 2001 °C °C ...
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... V = 50V 8.6A, di/dt 200A DSS, 4. Pulse Test : Pulse width 300 s, Duty cycle 2% 5. Essentially independent of operating temperature ©2001 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25° ...
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... Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 4000 C iss 3000 C oss 2000 C rss 1000 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2001 Fairchild Semiconductor Corporation Notes : 1. 250 s Pulse Test 25 10V Note : T ...
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... V , Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2001 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2.0 1.5 1.0 Notes : 250 A 0.5 D 0.0 100 150 200 -100 o C] Figure 8. On-Resistance Variation ...
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... Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2001 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT ...
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... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2001 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type ...
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... Package Dimensions 15.60 13.60 ø3.20 0.10 9.60 2.00 0.20 3.00 0.20 1.00 0.20 5.45TYP [5.45 ] 0.30 ©2001 Fairchild Semiconductor Corporation TO-3P 0.20 0.20 0.20 5.45TYP [5.45 ] 0.30 4.80 0.20 +0.15 1.50 –0.05 1.40 0.20 +0.15 0.60 –0.05 Rev. A, March 2001 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ HiSeC™ ...