FDA70N20 Fairchild Semiconductor, FDA70N20 Datasheet

MOSFET N-CH 200V 70A TO-3P

FDA70N20

Manufacturer Part Number
FDA70N20
Description
MOSFET N-CH 200V 70A TO-3P
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDA70N20

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
35 mOhm @ 35A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
70A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
86nC @ 10V
Input Capacitance (ciss) @ Vds
3970pF @ 25V
Power - Max
417W
Mounting Type
Through Hole
Package / Case
TO-3PN-3
Transistor Polarity
N Channel
Continuous Drain Current Id
70A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
35mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
5V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.035 Ohms
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
70 A
Power Dissipation
417 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDA70N20
Manufacturer:
ST
Quantity:
5 000
Part Number:
FDA70N20
Manufacturer:
FAIRCHILD
Quantity:
8 000
©2005 Fairchild Semiconductor Corporation
FDA70N20 Rev. A
FDA70N20
200V N-Channel MOSFET
Features
• 70A, 200V, R
• Low gate charge ( typical 66 nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J,
L
DSS
GSS
AS
AR
D
Symbol
Symbol
θJC
θCS
θJA
T
STG
rss
( typical 89 pF)
DS(on)
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Operating and Storage Temperature Range
= 0.035Ω @V
GS
G
- Continuous (T
- Continuous (T
- Pulsed
(T
- Derate above 25°C
= 10 V
Parameter
Parameter
D
C
= 25°C)
S
C
C
= 25°C)
= 100°C)
TO-3PN
FDA Series
1
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
(Note 2)
(Note 1)
(Note 1)
(Note 3)
(Note 1)
Min.
0.24
--
--
FDA70N20
-55 to +150
1742
41.7
200
280
±30
417
300
4.5
3.3
70
45
70
G
UniFET
Max.
0.3
40
--
S
D
www.fairchildsemi.com
Unit
W/°C
V/ns
mJ
mJ
Unit
°C/W
°C/W
°C/W
°C
°C
W
V
A
A
A
V
A
TM

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FDA70N20 Summary of contents

Page 1

... R Thermal Resistance, Case-to-Sink θCS R Thermal Resistance, Junction-to-Ambient θJA ©2005 Fairchild Semiconductor Corporation FDA70N20 Rev. A Description = 10 V These N-Channel enhancement mode power field effect transis- GS tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini- ...

Page 2

... DD G ≤ 70A, di/dt ≤ 200A/µs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDA70N20 Rev. A Package Reel Size TO-3PN - T = 25°C unless otherwise noted C Conditions 250µA ...

Page 3

... I , Drain Current [A] D Figure 5. Capacitance Characteristics 8000 6000 C oss C iss 4000 2000 C rss Drain-Source Voltage [V] DS FDA70N20 Rev. A Figure 2. Transfer Characteristics ※ Notes : 1. 250µ s Pulse Test ℃ Figure 4. Body Diode Forward Voltage Variation vs. Source Current 20V GS ※ Note : ℃ ...

Page 4

... Figure 9. Safe Operating Area Operation in This Area is Limited by R DS(on Drain-Source Voltage [V] DS Figure 11. Transient Thermal Response Curve - FDA70N20 Rev. A (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Notes : 0 250 µ 0.0 100 150 200 -100 o C] Figure 10. Maximum Drain Current 80 10 µ 100 µ ...

Page 5

... 3mA 3mA 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V FDA70N20 Rev. A Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V 300nF 300nF DUT DUT Resistive Switching Test Circuit & Waveforms ...

Page 6

... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FDA70N20 Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period controlled by pulse period ...

Page 7

... Mechanical Dimensions FDA70N20 Rev. A TO-3PN 7 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete FDA70N20 Rev. A ISOPLANAR™ Power247™ LittleFET™ PowerEdge™ MICROCOUPLER™ PowerSaver™ MicroFET™ PowerTrench MicroPak™ ...

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