FQA46N15 Fairchild Semiconductor, FQA46N15 Datasheet - Page 4

• Manufacturer Part Number: FQA46N15
• Description: MOSFET N-CH 150V 50A TO-3P
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQA46N15

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 42 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 3250pF @ 25V
• Power - Max: 250W
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.042 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 36 S
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 50 A
• Power Dissipation: 250000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FQA46N15 / FQA46N15_F109 Rev. A1
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
Figure 11. Transient Thermal Response Curve
10
10
10
10
10
1.2
1.1
1.0
0.9
0.8
-1
-100
3
2
1
0
10
0
vs. Temperature
-50
Operation in This Area
is Limited by R
T
V
J
DS
, Junction Temperature [
, Drain-Source Voltage [V]
0
※
1 0
1 0
1. T
2. T
3. Single Pulse
1 0
Notes :
10
-1
-2
C
J
1 0
0
= 175
1
DS(on)
= 25
-5
o
D = 0 .5
0 . 0 2
0 .0 1
C
0 .0 5
o
50
C
DC
0 .1
0 .2
10 ms
1 ms
100
1 0
o
-4
C]
s in g le p u ls e
100
※
t
1. V
2. I
1
Notes :
µ
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
D
s
10
GS
= 250 µ A
150
= 0 V
2
10
µ
1 0
s
- 3
200
(Continued)
4
1 0
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
- 2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
50
40
30
20
10
0
-100
25
※
1 0
1 . Z
2 . D u ty F a c to r , D = t
3 . T
P
vs. Temperature
-1
N o te s :
DM
vs. Case Temperature
θ J C
J M
- T
( t) = 0 .6
-50
50
C
= P
t
1
t
2
D M
1 0
T
℃
J
T
, Junction Temperature [
* Z
0
C
/W M a x .
75
0
, Case Temperature [ ]
1
θ J C
/t
2
( t)
100
50
1 0
1
100
125
℃
o
C]
※
1. V
2. I
150
150
Notes :
www.fairchildsemi.com
D
GS
= 22.8 A
= 10 V
175
200