FQA46N15 Fairchild Semiconductor, FQA46N15 Datasheet - Page 3

• Manufacturer Part Number: FQA46N15
• Description: MOSFET N-CH 150V 50A TO-3P
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQA46N15

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 42 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 3250pF @ 25V
• Power - Max: 250W
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.042 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 36 S
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 50 A
• Power Dissipation: 250000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FQA46N15 / FQA46N15_F109 Rev. A1
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 3. On-Resistance Variation vs.
Figure 5. Capacitance Characteristics
10
10
0.20
0.15
0.10
0.05
0.00
6000
5000
4000
3000
2000
1000
2
1
10
0
-1
10
Top :
Bottom : 4.5 V
0
-1
Drain Current and Gate Voltage
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
V
GS
40
V
DS
V
, Drain-Source Voltage [V]
DS
80
, Drain-Source Voltage [V]
I
10
D
10
0
, Drain Current [A]
0
C
C
C
iss
oss
rss
120
V
GS
= 20V
V
GS
= 10V
160
C
C
C
※
iss
oss
rss
1. 250µ s Pulse Test
2. T
= C
Notes :
= C
= C
10
10
C
gs
※
gd
1
ds
1
= 25 ℃
+ C
+ C
Note : T
gd
gd
200
※
(C
1. V
2. f = 1 MHz
ds
Notes :
J
= shorted)
= 25 ℃
GS
= 0 V
240
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
10
10
10
10
10
10
10
-1
2
1
0
12
10
2
1
0
0.2
2
8
6
4
2
0
0
Variation vs. Source Current
and Temperatue
0.4
25 ℃
10
175 ℃
175 ℃
0.6
20
4
V
25 ℃
V
GS
SD
Q
0.8
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
G
30
, Total Gate Charge [nC]
V
DS
-55 ℃
1.0
V
= 120V
40
DS
V
6
= 75V
DS
1.2
= 30V
50
1.4
60
※
※
1. V
2. 250µ s Pulse Test
1. V
2. 250µ s Pulse Test
Notes :
Notes :
8
DS
1.6
※
GS
= 40V
= 0V
70
Note : I
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1.8
D
= 45.6 A
80
2.0
10
90