FQA13N50CF Fairchild Semiconductor, FQA13N50CF Datasheet - Page 3

• Manufacturer Part Number: FQA13N50CF
• Description: MOSFET N-CH 500V 15A TO-3P
• Manufacturer: Fairchild Semiconductor
• Series: FRFET™r

Specifications of FQA13N50CF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 480 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 56nC @ 10V
• Input Capacitance (ciss) @ Vds: 2055pF @ 25V
• Power - Max: 218W
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.48 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 15 A
• Power Dissipation: 218 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FQA13N50CF Rev. A1
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 3. On-Resistance Variation vs.
Figure 5. Capacitance Characteristics
3000
2500
2000
1500
1000
10
10
10
500
-1
1
0
10
0
1.5
1.0
0.5
10
-1
Top :
Bottom : 4.5 V
-1
Drain Current and Gate Voltage
0
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
V
GS
5
V
V
DS
DS
, Drain-Source Voltage [V]
10
, Drain-Source Voltage [V]
10
10
I
0
D
0
, Drain Current [A]
C
C
C
15
iss
oss
rss
20
V
GS
= 10V
Notes :
1. 250us Pulse Test
2. T
C
C
C
iss
oss
rss
25
C
= C
= C
= C
10
= 25
10
gs
gd
1
ds
+ C
1
Note : T
+ C
°
C
gd
gd
Notes ;
30
1. V
2. f = 1 MHz
(C
V
ds
J
GS
GS
= 25
= shorted)
= 0 V
= 20V
°
C
35
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
10
10
10
10
10
10
12
10
-1
-1
8
6
4
2
0
1
0
1
0
0.2
2
0
Variation vs. Source Current
and Temperatue
25
°
C
150
0.4
°
C
10
150
4
°
C
V
V
Q
GS
SD
G
0.6
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
V
, Total Gate Charge [nC]
DS
25
= 400V
V
20
°
C
DS
-55
V
= 250V
DS
°
C
0.8
6
= 100V
30
1.0
Notes :
1. V
2. 250
Notes :
1. V
2. 250
DS
8
Note : I
= 40V
µ
s Pulse Test
GS
µ
40
= 0V
s Pulse Test
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1.2
D
= 15A
10
1.4
50