FQA13N50CF Fairchild Semiconductor, FQA13N50CF Datasheet

MOSFET N-CH 500V 15A TO-3P

FQA13N50CF

Manufacturer Part Number
FQA13N50CF
Description
MOSFET N-CH 500V 15A TO-3P
Manufacturer
Fairchild Semiconductor
Series
FRFET™r
Datasheet

Specifications of FQA13N50CF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
480 mOhm @ 7.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
15A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
56nC @ 10V
Input Capacitance (ciss) @ Vds
2055pF @ 25V
Power - Max
218W
Mounting Type
Through Hole
Package / Case
TO-3PN-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.48 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
15 A
Power Dissipation
218 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQA13N50CF
Manufacturer:
FSC
Quantity:
21 000
Part Number:
FQA13N50CF
Manufacturer:
FAIRCHILD
Quantity:
8 000
Part Number:
FQA13N50CF
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
This is to inform you that a design and/or process change will be made to the following
product(s). This notification is for your information and concurrence.
If you require data or samples to qualify this change, please contact Fairchild Semiconductor
within 30 days of receipt of this notification.
Updated process quality documentation, such as FMEAs and Control Plans, are available for
viewing upon request.
If you have any questions concerning this change, please contact:
PCN Originator:
Name: LEE, JEONGSOO
E-mail: JEONGSOO.LEE@fairchildsemi.com
Phone: 82-32-680-1311
Implementation of change:
Expected 1st Device Shipment Date: 2008/05/25
Earliest Year/Work Week of Changed Product: WW22
Change Type Description: Data Book Specifications
Description of Change (From): Rds(on) Max limit < 480mOhm @Vgs=10V, Id=7.5A
Description of Change (To): Rds(on) Max limit < 540mOhm @Vgs=10V, Id=7.5A
Reason for Change : Don't meet a existing spec - Spec limit change due to not enough margin.
Qual/REL Plan Numbers : Q20080076
Qualification :
This change don't need Reliability Test.
Results/Discussion
Test: (High Temperature Reverse Bias)
Lot
Q20080076AAHTRB
Q20080076AAHTRB
Product Id Description : There is a QFET product.
Affected FSIDs :
FQA13N50CF
DESIGN/PROCESS CHANGE NOTIFICATION -- FINAL
Technical Contact:
Name: LEE, JEONGSOO
E-mail: JEONGSOO.LEE@fairchildsemi.com
Phone: 82-32-680-1311
Device
FQA13N50CF
FQA13N50CF
FQA13N50CF_F109
500-HOURS
0/77
1000-HOURS
0/77
Date Issued On : 2008/02/28
Date Created : 2008/01/06
Failure Code
PCN# : Q1080102
Pg. 1

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