FDMS2672 Fairchild Semiconductor, FDMS2672 Datasheet - Page 2

• Manufacturer Part Number: FDMS2672
• Description: MOSFET N-CH 200V 3.7A POWER56
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of FDMS2672

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 77 mOhm @ 3.7A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 3.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 42nC @ 10V
• Input Capacitance (ciss) @ Vds: 2315pF @ 100V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-MLP, Power56
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 77 mOhms
• Forward Transconductance Gfs (max / Min): 14 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 20 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMS2672TR

FDMS2672 Rev.C
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1: R
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
BV
∆BV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
∆V
d(on)
r
d(off)
f
rr
DS(on)
FS
GS(th)
iss
oss
rss
g
SD
∆T
∆T
g(TOT)
gs
gd
rr
the user's board design.
Symbol
DSS
θJA
GS(th)
DSS
J
J
is determined with the device mounted on a 1in
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
a. 50°C/W when mounted on
a 1 in
T
2
J
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
2
= 25°C unless otherwise noted
pad of 2 oz copper
V
V
V
V
f = 1MHz
f = 1MHz
V
I
V
V
V
V
V
I
I
I
V
V
D
F
D
D
DS
DD
GS
GS
GS
GS
GS
GS
DS
GS
DS
GS
= 3.7A, di/dt = 100A/µs
= 250µA, referenced to 25°C
= 250µA, V
= 250µA, referenced to 25°C
= 0V to 10V V
= 100V, V
= 100V, I
= 10V, R
= 10V, I
= 0V, I
= 160V
= V
= 10V, I
= 6V, I
= 10V, I
= ±20V, V
2
DS
Test Conditions
, I
S
D
D
= 3.7A
D
D
D
D
GEN
GS
= 3.5A
GS
= 3.7A
DS
= 3.7A
= 3.7A T
= 250µA
= 3.7A
= 0V
= 0V,
= 0V
= 6Ω
I
D
DD
= 3.7A
= 100V
(Note 2)
J
= 125°C
θJC
b. 125°C/W when mounted on a
minimum pad of 2 oz copper
is guaranteed by design while R
Min
200
2
1740
238
129
0.9
0.8
Typ
3.1
-10
95
30
22
36
10
30
70
210
64
69
14
11
7
8
2315
±100
Max
125
105
357
156
1.2
45
34
22
57
20
42
77
88
θCA
www.fairchildsemi.com
4
1
is determined by
mV/°C
mV/°C
Units
mΩ
nC
pF
pF
pF
nC
nC
nC
µA
nA
ns
ns
ns
ns
ns
Ω
V
V
V
S