FDP65N06 Fairchild Semiconductor, FDP65N06 Datasheet - Page 4

• Manufacturer Part Number: FDP65N06
• Description: MOSFET N-CH 60V 65A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDP65N06

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16 mOhm @ 32.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 65A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 43nC @ 10V
• Input Capacitance (ciss) @ Vds: 2170pF @ 25V
• Power - Max: 135W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.016 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 65 A
• Power Dissipation: 135 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP65N06 Rev. A1
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
Figure 11. Transient Thermal Response Curve
10
10
10
10
10
1.2
1.1
1.0
0.9
0.8
-1
3
2
1
0
-100
10
0
vs. Temperature
Operation in This Area
is Limited by R
-50
DS(on)
T
V
J
, Junction Temperature [
DS
0
, Drain-SourceVoltage[V]
* Notes :
50
10
DC
1. T
2. T
3. Single Pulse
10
10
10
1
100ms
-1
-2
0
10
C
J
= 150
= 25
-5
10ms
0.02
D=0.5
0.05
0.01
0.1
o
0.2
C
o
C
100
1ms
o
C]
10
100
single pulse
* Notes :
-4
1. V
2. I
t
1
µ
D
, Square Wave Pulse Duration [sec]
GS
150
s
= 250
= 0 V
10
µ
10
A
µ
s
-3
(Continued)
200
10
2
4
10
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
-2
* Notes :
80
70
60
50
40
30
20
10
0
1. Z
2. Duty Factor, D=t
3. T
25
3.0
2.5
2.0
1.5
1.0
0.5
0.0
θ
JM
-100
JC
10
(t) = 0.92
- T
-1
C
= P
vs. Temperature
DM
vs. Case Temperature
0
C/W Max.
* Z
1
50
/t
θ
-50
JC
2
10
(t)
0
T
T
C
J
, Case Temperature [
, Junction Temperature [
0
10
75
1
50
100
o
100
C]
o
C]
125
* Notes :
www.fairchildsemi.com
1. V
2. I
150
D
GS
= 32.5 A
= 10 V
150
200