FDP65N06 Fairchild Semiconductor, FDP65N06 Datasheet - Page 2

• Manufacturer Part Number: FDP65N06
• Description: MOSFET N-CH 60V 65A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDP65N06

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16 mOhm @ 32.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 65A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 43nC @ 10V
• Input Capacitance (ciss) @ Vds: 2170pF @ 25V
• Power - Max: 135W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.016 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 65 A
• Power Dissipation: 135 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP65N06 Rev. A1
Package Marking and Ordering Information
Electrical Characteristics
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 47
3. I
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Off Characteristics
BV
∆BV
∆T
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
t
Q
Device Marking
Symbol
DSS
GSSF
GSSR
d(on)
r
d(off)
f
S
SM
rr
FS
GS(th)
SD
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
J
DSS
≤ 65A, di/dt ≤200A/µs, V
DSS
FDP65N06
µ
H, I
/
AS
=65A, V
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
DD
= 50V, R
DD
≤ BV
FDP65N06
G
Device
DSS,
Parameter
= 25 Ω, Starting T
Starting T
J
= 25°C
T
J
C
= 25°C
= 25°C unless otherwise noted
Package
TO-220
V
I
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
R
V
V
V
V
dI
D
GS
DS
DS
GS
GS
DS
GS
DS
DS
DD
DS
GS
GS
GS
G
F
= 250 µA, Referenced to 25°C
= 25 Ω
/ dt = 100 A/µs
= 60 V, V
= 48 V, T
= V
= 40 V, I
= 25 V, V
= 48 V, I
= 0 V, I
= 20 V, V
= -20 V, V
= 10 V, I
= 30 V, I
= 10 V
= 0 V, I
= 0 V, I
2
Test Conditions
GS
Reel Size
, I
D
S
S
D
D
D
D
D
= 65 A
= 65 A,
= 250 µA
C
GS
DS
GS
= 250 µA
DS
= 32.5 A
= 65A,
= 32.5 A
= 65A,
= 125°C
--
= 0 V
= 0 V
= 0 V,
= 0 V
(Note 4, 5)
(Note 4, 5)
(Note 4)
(Note 4)
Tape Width
Min
--
2.0
60
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
0.013
1670
Typ
464
132
0.5
39
35
24
94
98
52
33
10
62
11
--
--
--
--
--
--
--
--
--
Quantity
0.016
Max Units
2170
-100
100
600
200
210
114
260
4.0
1.4
www.fairchildsemi.com
10
52
58
43
65
--
--
--
1
--
--
--
--
50
V/°C
µA
µA
nA
nA
pF
nC
nC
nC
nC
pF
pF
ns
ns
ns
ns
ns
Ω
V
V
S
A
A
V