FQAF9P25 Fairchild Semiconductor, FQAF9P25 Datasheet - Page 6

• Manufacturer Part Number: FQAF9P25
• Description: MOSFET P-CH 250V 7.1A TO-3P
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQAF9P25

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 620 mOhm @ 3.55A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 7.1A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 1180pF @ 25V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-3PF-3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.62 Ohms
• Forward Transconductance Gfs (max / Min): 5.1 S
• Drain-source Breakdown Voltage: - 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 7.1 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2000 Fairchild Semiconductor International
( Driver )
( Driver )
( DUT )
( DUT )
( DUT )
( DUT )
V
V
I
I
V
V
SD
SD
GS
GS
DS
DS
V
V
GS
GS
Peak Diode Recovery dv/dt Test Circuit & Waveforms
R
R
G
G
Driver
Driver
DUT
DUT
I
I
FM
FM
I
I
D =
D =
D =
SD
SD
, Body Diode Forward Current
, Body Diode Forward Current
Forward Voltage Drop
Forward Voltage Drop
--------------------------
--------------------------
--------------------------
Gate Pulse Period
Gate Pulse Period
Gate Pulse Period
Gate Pulse Width
Gate Pulse Width
Gate Pulse Width
Body Diode
Body Diode
Compliment of DUT
Compliment of DUT
V
V
Body Diode Recovery dv/dt
Body Diode Recovery dv/dt
+
+
_
_
DS
DS
• dv/dt controlled by R
• dv/dt controlled by R
• I
• I
V
V
(N-Channel)
(N-Channel)
SD
SD
SD
SD
Body Diode Reverse Current
Body Diode Reverse Current
controlled by pulse period
controlled by pulse period
I
I
RM
RM
L
L L
G
G
di/dt
di/dt
V
V
V
V
10V
10V
DD
DD
DD
DD
Rev. A2, December 2000