FQAF9P25 Fairchild Semiconductor, FQAF9P25 Datasheet - Page 4

• Manufacturer Part Number: FQAF9P25
• Description: MOSFET P-CH 250V 7.1A TO-3P
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQAF9P25

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 620 mOhm @ 3.55A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 7.1A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 1180pF @ 25V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-3PF-3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.62 Ohms
• Forward Transconductance Gfs (max / Min): 5.1 S
• Drain-source Breakdown Voltage: - 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 7.1 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2000 Fairchild Semiconductor International
Typical Characteristics
10
10
10
10
1.2
1.1
1.0
0.9
0.8
-1
Figure 9. Maximum Safe Operating Area
-100
2
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
-V
T
vs. Temperature
J
DS
, Junction Temperature [
0
, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
※ Notes :
1 0
1 0
1 0
10
1. T
2. T
3. Single Pulse
1
- 1
- 2
1 0
C
J
0
= 150
= 25
- 5
o
D = 0 .5
0 .0 2
0 .0 1
0 .0 5
C
o
0 .1
0 .2
C
50
DS(on)
DC
Figure 11. Transient Thermal Response Curve
10 ms
100
1 0
(Continued)
s i n g l e p u ls e
1 ms
o
- 4
C]
10
※ Notes :
1. V
2. I
t
2
1
100 s
D
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
GS
= -250 μ A
150
= 0 V
1 0
- 3
200
1 0
- 2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
8
6
4
2
0
-100
25
※ N o te s :
Figure 8. On-Resistance Variation
1 0
Figure 10. Maximum Drain Current
1 . Z
2 . D u ty F a c to r , D = t
3 . T
- 1
P
θ J C
J M
-50
DM
- T
50
( t) = 1 .7 9 ℃ /W M a x .
C
vs. Case Temperature
= P
T
vs. Temperature
J
T
t
, Junction Temperature [
1
D M
C
t
1 0
0
, Case Temperature [ ℃ ]
2
* Z
0
75
1
θ J C
/t
2
( t)
50
100
1 0
1
100
o
C]
※ Notes :
125
1. V
2. I
150
D
GS
= -4.7 A
= -10 V
Rev. A2, December 2000
200
150