FDD2670 Fairchild Semiconductor, FDD2670 Datasheet - Page 3

• Manufacturer Part Number: FDD2670
• Description: MOSFET N-CH 200V 3.6A D-PAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD2670

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 130 mOhm @ 3.6A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 43nC @ 10V
• Input Capacitance (ciss) @ Vds: 1228pF @ 100V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 3.6A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 130mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.13 Ohms
• Forward Transconductance Gfs (max / Min): 15 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 3.2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
30
24
18
12
6
0
20
15
10
5
0
Figure 3. On-Resistance Variation with
2.5
1.5
0.5
3
Figure 1. On-Region Characteristics.
0
2
1
0
-50
Figure 5. Transfer Characteristics.
V
GS
V
= 10V
V
I
D
GS
DS
= 3.6A
-25
= 10V
= 15V
4
2
V
GS
V
T
, GATE TO SOURCE VOLTAGE (V)
6.5V
0
DS
J
, JUNCTION TEMPERATURE (
Temperature.
, DRAIN-SOURCE VOLTAGE (V)
T
A
= 125
25
5
4
o
C
6.0V
25
50
o
C
6
-55
6
75
o
C
5.5V
100
o
C)
7
8
125
150
8
10
Figure 6. Body Diode Forward Voltage Variation
0.4
0.3
0.2
0.1
0.001
0
0.01
100
0.1
4
10
1.6
1.4
1.2
0.8
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
with Source Current and Temperature.
1
1
0
0
V
Drain Current and Gate Voltage.
V
GS
GS
= 0V
= 5.5V
5
0.2
Gate-to-Source Voltage.
V
SD
V
4
GS
, BODY DIODE FORWARD VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
0.4
T
6
A
= 125
I
D
T
, DRAIN CURRENT (A)
A
= 125
o
8
0.6
C
T
A
7
6.0V
o
C
25
= 25
o
C
0.8
o
C
12
-55
8
6.5V
o
C
1
FDD2670 Rev C1(W)
16
I
9
D
1.2
= 1.8 A
10.0V
1.4
10
20