FDD2670 Fairchild Semiconductor, FDD2670 Datasheet
FDD2670
Manufacturer Part Number
FDD2670
Description
MOSFET N-CH 200V 3.6A D-PAK
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDD2670.pdf
(5 pages)
Specifications of FDD2670
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
130 mOhm @ 3.6A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
3.6A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
43nC @ 10V
Input Capacitance (ciss) @ Vds
1228pF @ 100V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
N Channel
Continuous Drain Current Id
3.6A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
130mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.13 Ohms
Forward Transconductance Gfs (max / Min)
15 S
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3.6 A
Power Dissipation
3.2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDD2670
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDD2670
200V N-Channel PowerTrench MOSFET
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
2001 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
dv/dt
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
J
DSS
GSS
D
, T
JC
JA
(ON)
Device Marking
STG
N-Channel
specifications.
FDD2670
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current
Maximum Power Dissipation @ T
Peak Diode Recovery dv/dt
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G
S
MOSFET
TO-252
– Continuous
– Pulsed
has
FDD2670
Device
Parameter
D
been
@ T
@ T
designed
A
A
C
T
A
= 25 C
= 25 C
= 25 C
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1b)
(Note 1b)
(Note 3)
(Note 1)
(Note 1)
(Note 1)
Features
3.6 A, 200 V. R
Low gate charge
Fast switching speed
High performance trench technology for extremely
High power and current handling capability
low R
DS(ON)
Tape width
G
DS(ON)
16mm
-55 to +150
Ratings
200
3.6
3.2
1.3
3.2
1.8
20
70
96
20
= 130 m @ V
D
S
November 2001
GS
FDD2670 Rev C1(W)
2500 units
= 10 V
Quantity
Units
V/ns
C/W
C/W
W
V
V
A
C
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Datasheet:
FDD2670 Summary of contents
Page 1
... C unless otherwise noted A (Note (Note (Note 1a (Note 1b) A (Note 3) (Note 1) (Note 1b) Reel Size 13’’ November 2001 = 130 DS(ON Ratings Units 200 3 3.2 1.3 3.2 V/ns -55 to +150 C 1.8 C/W 96 C/W Tape width Quantity 16mm 2500 units FDD2670 Rev C1(W) ...
Page 2
... 1.0 MHz V = 100 GEN V = 100 3 2 determined by the user's board design minimum mounting pad Min Typ Max Units 375 3.6 200 214 mV 100 –100 4.5 -10 mV/ C 100 130 m 205 275 = 125 1228 112 2.1 0.7 1.2 (Note C FDD2670 Rev C1( ...
Page 3
... Figure 4. On-Resistance Variation with 100 0 0.01 0.001 0 0 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 6.0V 6.5V 10. DRAIN CURRENT ( 1 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDD2670 Rev C1( 1.4 ...
Page 4
... Figure 10. Single Pulse Maximum 0 TIME (sec 1MHz RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 96°C 25° 100 1000 t , TIME (sec) 1 Power Dissipation. R ( 96°C/W JA P(pk ( Duty Cycle 100 FDD2670 Rev C1(W) 100 2 1000 ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...