SFP9640 Fairchild Semiconductor, SFP9640 Datasheet - Page 3

• Manufacturer Part Number: SFP9640
• Description: MOSFET P-CH 200V 11A TO-220
• Manufacturer: Fairchild Semiconductor

Specifications of SFP9640

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 59nC @ 10V
• Input Capacitance (ciss) @ Vds: 1585pF @ 25V
• Power - Max: 123W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1.50
1.25
1.00
0.75
0.50
0.25
0.00
2500
2000
1500
1000
10
500
POWER MOSFET
10
10
-1
0
1
0
10
10
0
P-CHANNEL
-1
0
Top :
Bottom : - 4.5 V
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 3. On-Resistance vs. Drain Current
C
C
C
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
rss
- 10 V
iss
oss
- 15 V
V
GS
7
Fig 1. Output Characteristics
-V
-V
DS
DS
-I
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
V
14
D
GS
, Drain Current [A]
= -10 V
10
0
21
@ Notes :
C
C
C
V
iss
oss
rss
1. 250 s Pulse Test
2. T
GS
= C
= C
= C
= -20 V
C
gs
ds
gd
10
= 25
+ C
+ C
1
28
gd
gd
o
C
( C
@ Note : T
ds
@ Notes :
= shorted )
1. V
2. f = 1 MHz
35
GS
J
= 0 V
10
= 25
1
o
C
42
10
10
10
10
10
10
-1
-1
10
1
0
1
0
5
0
0.5
2
0
Fig 4. Source-Drain Diode Forward Voltage
Fig 6. Gate Charge vs. Gate-Source Voltage
25
1.0
o
150
C
150
o
Fig 2. Transfer Characteristics
25
C
o
10
C
V
1.5
-V
V
V
-V
o
DS
DS
DS
C
SD
Q
4
GS
= -40 V
= -160 V
= -100 V
G
, Source-Drain Voltage [V]
, Total Gate Charge [nC]
, Gate-Source Voltage [V]
2.0
- 55
20
o
C
2.5
6
3.0
SFP9640
@ Notes :
@ Notes :
1. V
2. 250 s Pulse Test
30
1. V
2. V
3. 250 s Pulse Test
@ Notes : I
GS
3.5
GS
DS
= 0 V
= 0 V
= -40 V
8
D
4.0
=-11 A
40
4.5
5.0
10
50