SFP9640 Fairchild Semiconductor, SFP9640 Datasheet - Page 2

• Manufacturer Part Number: SFP9640
• Description: MOSFET P-CH 200V 11A TO-220
• Manufacturer: Fairchild Semiconductor

Specifications of SFP9640

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 59nC @ 10V
• Input Capacitance (ciss) @ Vds: 1585pF @ 25V
• Power - Max: 123W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SFP9640
Symbol
Electrical Characteristics
Source-Drain Diode Ratings and Characteristics
Symbol
Notes ;
O
O
O
O
O
5
1
2
4
R
3
BV
BV/ T
V
t
t
V
I
I
C
C
C
GS(th)
Q
Q
I
Q
DS(on)
d(on)
d(off)
GSS
DSS
g
Q
I
SM
t
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=10mH, I
I
Pulse Test : Pulse Width = 250 s, Duty Cycle
Essentially Independent of Operating Temperature
t
SD
t
S
rr
SD
oss
rss
DSS
iss
fs
r
f
gs
gd
rr
g
< _
J
-11A, di/dt
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain( “ Miller “ ) Charge
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
AS
=-11A, V
< _
450A/ s, V
Characteristic
Characteristic
DD
=-50V, R
DD
G
< _
=27
BV
(T
DSS
*
, Starting T
C
=25
, Starting T
O
O
4
1
< _
o
C unless otherwise specified)
2%
Min.
Min.
-200
-2.0
J
--
--
--
--
--
=25
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
J
=25
o
-0.16
C
1220
Typ.
Typ.
22.9
1.24
207
180
9.2
6.5
o
81
16
23
54
19
46
--
--
--
--
--
--
--
--
--
--
C
Max. Units
Max. Units
-100
-100
1585
-5.0
-4.0
100
310
120
115
-10
0.5
-11
-44
40
55
50
59
--
--
--
--
--
--
--
V/
nA
nC
ns
pF
ns
A
V
V
V
o
A
C
C
V
I
V
V
V
V
V
V
V
V
V
R
V
I
See Fig 6 & Fig 12
Integral reverse pn-diode
in the MOSFET
T
T
di
D
D
J
J
GS
DS
GS
GS
DS
DS
GS
DS
GS
DD
DS
=-250 A
G
=-11A
F
=25
=25
=9.1
/dt=100A/ s
=0V,I
=-5V,I
=-30V
=30V
=-200V
=-160V,T
=-10V,I
=-40V,I
=0V,V
=-100V,I
=-160V,V
See Fig 13
Test Condition
Test Condition
o
o
POWER MOSFET
C,I
C,I
See Fig 5
D
P-CHANNEL
D
S
F
DS
=-250 A
=-11A
=-250 A
=-11A,V
D
D
=-25V,f =1MHz
=-5.5A
=-5.5A
D
C
GS
=-11A,
See Fig 7
=125
=-10V,
GS
o
C
=0V
O
O
4
4
O
O
O
4
4
4
O
O
5
5