FQPF11N50CF Fairchild Semiconductor, FQPF11N50CF Datasheet - Page 5

• Manufacturer Part Number: FQPF11N50CF
• Description: MOSFET N-CH 500V 11A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: FRFET™r

Specifications of FQPF11N50CF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 550 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 55nC @ 10V
• Input Capacitance (ciss) @ Vds: 2055pF @ 25V
• Power - Max: 48W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.55 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 11 A
• Power Dissipation: 48000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FQP11N50CF/FQPF11N50CF Rev. A
Typical Performance Characteristics
Figure 11-2. Transient Thermal Response Curve for FQPF11N50CF
Figure 11-1. Transient Thermal Response Curve for FQP11N50CF
1 0
1 0
1 0
1 0
1 0
1 0
- 1
- 2
- 1
- 2
1 0
1 0
0
0
- 5
- 5
D = 0 .5
0 .2
0 .0 2
D = 0 .5
0 . 2
0 .1
0 .0 5
0 .0 1
0 . 1
0 . 0 5
0 .0 1
0 .0 2
1 0
1 0
- 4
- 4
t
t
1
s i n g le p u ls e
1
, S q u a r e W a v e P u ls e D u r a t io n [s e c ]
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
s in g le p u ls e
1 0
1 0
- 3
- 3
(Continued)
5
1 0
1 0
- 2
- 2
* N o te s :
* N o t e s :
1 . Z
2 . D u ty F a c to r , D = t
3 . T
1 . Z
2 . D u t y F a c t o r , D = t
3 . T
1 0
1 0
θ
J M
- 1
- 1
P
P
J C
θ
J M
J C
DM
DM
( t) = 0 .6 4
- T
( t ) = 2 . 5 8
- T
C
C
= P
= P
D M
t
t
1
1
D M
t
t
o
2
2
C / W M a x .
* Z
o
1 0
C / W M a x .
* Z
1 0
1
/t
θ
1
J C
0
0
θ
/ t
2
J C
( t)
2
( t )
1 0
1 0
1
1
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