FQPF11N50CF Fairchild Semiconductor, FQPF11N50CF Datasheet

MOSFET N-CH 500V 11A TO-220F

FQPF11N50CF

Manufacturer Part Number
FQPF11N50CF
Description
MOSFET N-CH 500V 11A TO-220F
Manufacturer
Fairchild Semiconductor
Series
FRFET™r
Datasheet

Specifications of FQPF11N50CF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
550 mOhm @ 5.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
55nC @ 10V
Input Capacitance (ciss) @ Vds
2055pF @ 25V
Power - Max
48W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.55 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
11 A
Power Dissipation
48000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQPF11N50CF
Manufacturer:
FSC
Quantity:
1 250
Part Number:
FQPF11N50CF
Manufacturer:
Fairchi/ON
Quantity:
17 455
Part Number:
FQPF11N50CF
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2005 Fairchild Semiconductor Corporation
FQP11N50CF/FQPF11N50CF Rev. A
FQP11N50CF/FQPF11N50CF
500V N-Channel MOSFET
Features
• 11A, 500V, R
• Low Gate Charge (typical 43 nC)
• Low Crss (typical 20pF)
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• Fast Recovery Body Diode (typical 90ns)
Absolute Maximum Ratings
* Drain current limited by maximum junction temperature
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
Symbol
Symbol
J
L
DSS
GSS
AS
AR
D
θJC
θJS
θJA
, T
STG
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
G
DS(on)
D
S
= 0.55Ω @V
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
GS
TO-220
FQP Series
C
Parameter
Parameter
= 10 V
= 25°C)
C
C
= 25°C)
= 100°C)
G
D
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
S
1
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
ciency switched mode power supplies, active power factor cor-
rection, electronic lamp ballasts based on half bridge topology.
FQP11N50CF FQPF11N50CF
FQP11N50CF
TO-220F
FQPF Series
1.56
0.64
62.5
195
0.5
11
44
7
-55 to +150
± 30
19.5
500
670
300
4.5
11
FQPF11N50CF
G
0.39
44 *
11 *
2.58
62.5
7 *
48
--
FRFET
◀ ◀ ◀ ◀
◀ ◀ ◀ ◀
D
S
● ●
● ●
● ●
● ●
● ●
● ●
▲ ▲ ▲ ▲
▲ ▲ ▲ ▲
www.fairchildsemi.com
Units
Units
July 2005
W/°C
V/ns
°C/W
°C/W
°C/W
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM

Related parts for FQPF11N50CF

FQPF11N50CF Summary of contents

Page 1

... Thermal Resistance, Case-to-Sink Typ. θJS R Thermal Resistance, Junction-to-Ambient θJA ©2005 Fairchild Semiconductor Corporation FQP11N50CF/FQPF11N50CF Rev. A Description = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini- ...

Page 2

... V = 50V ≤ 11A, di/dt ≤ 200A/µs, V ≤ Starting DSS, 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ Essentially independent of operating temperature FQP11N50CF/FQPF11N50CF Rev. A Package Reel Size TO-220 -- TO-220F -- T = 25°C unless otherwise noted C Test Conditions = 250 µ ...

Page 3

... V = 10V GS 0.6 0.5 0.4 0 Drain Current [A] D Figure 5. Capacitance Characteristics 4000 3000 C iss C oss 2000 C rss 1000 Drain-Source Voltage [V] DS FQP11N50CF/FQPF11N50CF Rev. A Figure 2. Transfer Characteristics Notes : 1. 250 µ s Pulse Test ° Figure 4. Body Diode Forward Voltage 20V GS * Note : ° 0 Figure 6 ...

Page 4

... Figure 9-1. Maximum Safe Operating Area for FQP11N50CF Operation in This Area is Limited by R DS(on Drain-Source Voltage [V] DS Figure 10. Maximum Drain Current vs. Case Temperature FQP11N50CF/FQPF11N50CF Rev. A (Continued) Figure 8. On-Resistance Variation vs. Temperature 3.0 2.5 2.0 1.5 1.0 * Notes : 0 250 A µ D 0.0 100 150 200 -100 C] ° ...

Page 5

... Typical Performance Characteristics Figure 11-1. Transient Thermal Response Curve for FQP11N50CF Figure 11-2. Transient Thermal Response Curve for FQPF11N50CF FQP11N50CF/FQPF11N50CF Rev. A (Continued θ θ θ θ www.fairchildsemi.com ...

Page 6

... 3mA 3mA 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V FQP11N50CF/FQPF11N50CF Rev. A Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V 300nF 300nF DUT DUT Resistive Switching Test Circuit & Waveforms ...

Page 7

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FQP11N50CF/FQPF11N50CF Rev DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period controlled by pulse period ...

Page 8

... Mechanical Dimensions FQP11N50CF/FQPF11N50CF Rev 220 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... Mechanical Dimensions 10.16 MAX1.47 0.80 ±0.10 ±0.10 0.35 2.54TYP ±0.20 [2.54 ] FQP11N50CF/FQPF11N50CF Rev. A (Continued) TO-220F ±0.20 ±0.10 ø3.18 (7.00) (1.00x45°) #1 2.54TYP ±0.20 [2.54 ] ±0.20 9.40 9 2.54 ±0.20 (0.70) +0.10 0.50 ±0.20 2.76 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...

Page 10

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete FQP11N50CF/FQPF11N50CF Rev. A ISOPLANAR™ PowerSaver™ LittleFET™ PowerTrench MICROCOUPLER™ QFET MicroFET™ QS™ MicroPak™ ...

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