FDS6679Z Fairchild Semiconductor, FDS6679Z Datasheet - Page 16

• Manufacturer Part Number: FDS6679Z
• Description: MOSFET P-CH 30V 13A 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDS6679Z

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 94nC @ 10V
• Input Capacitance (ciss) @ Vds: 3803pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.009Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): 20V
• Drain Current (max): 13A
• Power Dissipation: 2.5W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

same safeguards for sole source products as multi-source products.
We thank you for your attention in this matter. Should you have any questions,
please do not hesitate to contact your Fairchild Semiconductor salesperson.
Sincerely,
Fairchild Semiconductor
c.c.: Celsa Gonzalez
Tom Hudson
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