FQP32N20C Fairchild Semiconductor, FQP32N20C Datasheet - Page 5

• Manufacturer Part Number: FQP32N20C
• Description: MOSFET N-CH 200V 28A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQP32N20C

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 82 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 28A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 2200pF @ 25V
• Power - Max: 156W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.082 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 20 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 28 A
• Power Dissipation: 156000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2004 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 11-2. Transient Thermal Response Curve for FQPF32N20C
1 0
1 0
Figure 11-1. Transient Thermal Response Curve for FQP32N20C
1 0
1 0
1 0
1 0
- 1
- 2
-1
-2
0
1 0
1 0
0
- 5
-5
D = 0 . 5
0 .0 2
0 .0 1
0 .0 5
D = 0 .5
0 .0 5
0 .0 2
0 . 0 1
0 .2
0 .1
0 .2
0 .1
(Continued)
1 0
1 0
- 4
s in g le p u ls e
-4
s in g le p u ls e
t
t
1
1
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
1 0
1 0
- 3
-3
1 0
1 0
- 2
-2
※
1 0
1 0
1 . Z
2 . D u t y F a c to r , D = t
3 . T
P
P
※
N o te s :
DM
DM
- 1
-1
1 . Z
2 . D u ty F a c to r , D = t
3 . T
θ
J M
N o te s :
J C
( t) = 0 . 8 0
- T
θ
J M
J C
( t) = 2 .5 1
- T
C
= P
t
t
1
1
C
t
t
2
2
= P
D M
1 0
1 0
℃
* Z
D M
/W M a x .
0
0
℃
1
* Z
θ
/t
J C
/W M a x .
2
1
( t)
θ
/t
J C
2
( t)
1 0
1 0
1
1
Rev. A, March 2004