FQP32N20C Fairchild Semiconductor, FQP32N20C Datasheet - Page 3

• Manufacturer Part Number: FQP32N20C
• Description: MOSFET N-CH 200V 28A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQP32N20C

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 82 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 28A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 2200pF @ 25V
• Power - Max: 156W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.082 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 20 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 28 A
• Power Dissipation: 156000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2004 Fairchild Semiconductor Corporation
Typical Characteristics
6000
5000
4000
3000
2000
1000
10
10
10
0
2
1
0
10
0.3
0.2
0.1
0.0
10
-1
-1
Figure 5. Capacitance Characteristics
Top :
Bottom : 4.5 V
0
Figure 3. On-Resistance Variation vs
※
Figure 1. On-Region Characteristics
1. V
2. f = 1 MHz
Notes :
Drain Current and Gate Voltage
GS
15.0 V
10.0 V
= 0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
V
GS
20
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
10
10
I
D
0
0
, Drain Current [A]
40
C
C
C
oss
rss
iss
V
GS
= 10V
60
C
C
C
iss
oss
rss
※
= C
= C
= C
1. 250µ s Pulse Test
2. T
10
Notes :
10
gs
gd
ds
※
1
C
1
+ C
+ C
= 25 ℃
Note : T
80
gd
gd
(C
V
ds
GS
J
= shorted)
= 25 ℃
= 20V
100
10
10
10
10
10
10
10
10
12
10
-1
-1
8
6
4
2
0
2
1
0
2
1
0
0.0
2
0
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
Figure 2. Transfer Characteristics
25
150
o
C
Variation with Source Current
o
C
0.4
20
4
150 ℃
V
V
Q
GS
SD
and Temperature
G
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
V
, Total Gate Charge [nC]
25 ℃
DS
V
= 160V
-55
0.8
40
DS
o
= 100V
C
V
DS
6
= 40V
1.2
60
※
1. V
2. 250µ s Pulse Test
Notes :
※
DS
1. V
2. 250µ s Pulse Test
Notes :
※
8
= 40V
GS
Note : I
1.6
80
= 0V
D
= 32.0A
Rev. A, March 2004
100
10
2.0