FDS4141 Fairchild Semiconductor, FDS4141 Datasheet - Page 3

• Manufacturer Part Number: FDS4141
• Description: MOSFET P-CH 40V 10.8A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS4141

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13 mOhm @ 10.5A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 10.8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 49nC @ 10V
• Input Capacitance (ciss) @ Vds: 2670pF @ 20V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.013 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 10.8 A
• Power Dissipation: 5000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS4141TR

©2007 Fairchild Semiconductor Corporation
FDS4141 Rev.C
Typical Characteristics
1.8
1.6
1.4
1.2
1.0
0.8
0.6
36
27
18
36
27
18
Figure 3. Normalized On- Resistance
9
0
9
0
Figure 1.
0
-75
0
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
V
I
V
DS
D
-50
GS
= -10.5A
vs Junction Temperature
= -5V
= -10V
-V
T
-V
-25
J
DS
On-Region Characteristics
GS
,
1
V
JUNCTION TEMPERATURE (
,
, GATE TO SOURCE VOLTAGE (V)
GS
V
DRAIN TO SOURCE VOLTAGE (V)
GS
1
= -10V
0
V
= - 4.5V
V
GS
GS
= -4V
25
= -3.5V
µ
s
T
J
2
T
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
= 25
J
50
= 150
T
J
o
C
= 25°C unless otherwise noted
2
o
75
C
V
GS
3
o
100 125 150
C )
T
= -3V
J
= -55
o
µ
C
s
3
4
3
0.001
0.01
100
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.1
Figure 2.
50
40
30
20
10
Figure 4.
10
Forward Voltage vs Source Current
0
1
vs Drain Current and Gate Voltage
Figure 6.
0.0
2
0
V
V
GS
GS
-V
T
= -3V
0.2
-V
J
SD
= 0V
Normalized On-Resistance
On-Resistance vs Gate to
= 150
GS
, BODY DIODE FORWARD VOLTAGE (V)
Source Voltage
Source to Drain Diode
,
-I
4
9
GATE TO SOURCE VOLTAGE
D
I
o
,
D
C
DRAIN CURRENT(A)
= -10.5A
0.4
0.6
18
6
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
V
GS
T
T
J
J
= 125
= -3.5V
= 25
0.8
T
o
J
o
C
= -55
C
27
T
8
www.fairchildsemi.com
J
V
V
(
V
= 25
o
V
GS
GS
GS
C
1.0
)
= -4V
= - 4.5V
= -10V
o
C
µ
s
µ
s
1.2
10
36