FDD5353 Fairchild Semiconductor, FDD5353 Datasheet - Page 4

• Manufacturer Part Number: FDD5353
• Description: MOSFET N-CH 60V 11.5A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD5353

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12.3 mOhm @ 10.7A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 11.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 65nC @ 10V
• Input Capacitance (ciss) @ Vds: 3215pF @ 30V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0123 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11.5 A
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD5353TR

©2008 Fairchild Semiconductor Corporation
FDD5353 Rev.C
Typical Characteristics
100
200
0.1
10
20
10
10
Figure 7.
1
8
6
4
2
0
0.01
1
0.1
0
Figure 9.
I
D
Figure 11. Forward Bias Safe
= 10.7A
THIS AREA IS
LIMITED BY r
Switching Capability
V
10
Gate Charge Characteristics
DS
0.1
t
AV
, DRAIN to SOURCE VOLTAGE (V)
Operating Area
Unclamped Inductive
, TIME IN AVALANCHE(ms)
Q
1
g
, GATE CHARGE(nC)
DS(on)
SINGLE PULSE
T
R
T
20
J
C
θ
JC
= MAX RATED
= 25
= 1.8
T
o
J
1
V
C
V
= 125
DD
o
DD
C/W
T
= 40V
30
= 20V
J
10
o
= 25°C unless otherwise noted
C
T
V
J
DD
= 25
10
= 30V
40
o
C
100us
1ms
10ms
100ms
DC
100
100
50
200
4
10000
10
10
10
10
60
50
40
30
20
10
10
1000
0
100
Figure 10.
5
4
3
2
25
10
10
0.1
Figure 12.
-6
Limited by Package
R
Figure 8.
θ
Current vs Case Temperature
JC
f = 1MHz
V
GS
= 1.8
10
= 0V
50
V
-5
o
V
GS
C/W
Maximum Continuous Drain
Power Dissipation
T
DS
to Source Voltage
C
t, PULSE WIDTH (sec)
= 10V
, DRAIN TO SOURCE VOLTAGE (V)
,
Single Pulse Maximum
Capacitance vs Drain
CASE TEMPERATURE (
10
-4
75
V
GS
1
V
10
= 10V
GS
-3
= 4.5V
100
SINGLE PULSE
R
T
10
C
θ
JC
= 25
-2
o
= 1.8
C )
o
C
125
o
www.fairchildsemi.com
C/W
10
10
-1
C
C
C
rss
oss
iss
150
1
30