FDD5353 Fairchild Semiconductor, FDD5353 Datasheet - Page 3

• Manufacturer Part Number: FDD5353
• Description: MOSFET N-CH 60V 11.5A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD5353

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12.3 mOhm @ 10.7A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 11.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 65nC @ 10V
• Input Capacitance (ciss) @ Vds: 3215pF @ 30V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0123 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11.5 A
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD5353TR

©2008 Fairchild Semiconductor Corporation
FDD5353 Rev.C
Typical Characteristics
100
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
80
60
40
20
Figure 3. Normalized On- Resistance
80
60
40
20
Figure 1.
0
0
-75
Figure 5. Transfer Characteristics
0
1
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
V
I
V
D
DS
GS
-50
= 10.7A
vs Junction Temperature
= 5V
= 10V
V
T
1
V
-25
On-Region Characteristics
DS
J
GS
,
,
JUNCTION TEMPERATURE (
2
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
DRAIN TO SOURCE VOLTAGE (V)
V
T
0
J
GS
V
= 150
GS
2
= 4V
25
V
= 4.5V
µ
GS
o
s
C
3
= 10V
T
50
T
J
J
3
= -55
= 25°C unless otherwise noted
T
75
µ
J
s
= 25
o
C
o
4
100 125 150
o
C )
C
V
4
V
GS
GS
= 3.5V
= 3V
5
5
3
0.001
0.01
100
200
3.0
2.5
2.0
1.5
1.0
0.5
0.1
40
32
24
16
10
8
0
1
Figure 2.
Figure 4.
0.0
Forward Voltage vs Source Current
0
2
vs Drain Current and Gate Voltage
Figure 6.
V
GS
3
0.2
V
T
J
SD
= 0V
= 150
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
20
, BODY DIODE FORWARD VOLTAGE (V)
V
Normalized On-Resistance
V
On-Resistance vs Gate to
GS
GS
I
4
Source Voltage
D
Source to Drain Diode
,
o
0.4
,
GATE TO SOURCE VOLTAGE (V)
C
= 3V
DRAIN CURRENT(A)
5
40
0.6
T
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
I
T
D
J
J
= 25
= 10.7A
= 125
6
o
0.8
C
V
o
µ
60
C
V
GS
s
7
GS
T
J
= 4.5V
T
= -55
= 3.5V
J
1.0
= 25
8
o
C
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o
80
V
C
V
GS
GS
µ
1.2
s
= 4V
9
= 10V
100
1.4
10