FQPF15P12 Fairchild Semiconductor, FQPF15P12 Datasheet - Page 4

• Manufacturer Part Number: FQPF15P12
• Description: MOSFET P-CH 120V 15A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF15P12

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 200 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 120V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 1100pF @ 25V
• Power - Max: 41W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.2 Ohms
• Forward Transconductance Gfs (max / Min): 9.5 S
• Drain-source Breakdown Voltage: - 120 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 15 A
• Power Dissipation: 41 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2003 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 9-1. Maximum Safe Operating Area
1.2
1.1
1.0
0.9
0.8
10
10
10
10
20
15
10
Figure 7. Breakdown Voltage Variation
-100
5
0
-1
2
1
0
25
10
Figure 10. Maximum Drain Current
0
-50
50
Operation in This Area
is Limited by R
vs Case Temperature
T
vs Temperature
-V
J
for FQP15P12
, Junction Temperature [
DS
T
C
0
, Drain-Source Voltage [V]
75
, Case Temperature [ ℃ ]
DS(on)
※ Notes :
1. T
2. T
3. Single Pulse
10
C
J
1
= 25
= 175
50
100
DC
o
C
o
C
10 ms
(Continued)
100
125
o
1 ms
C]
※ Notes :
1. V
2. I
D
GS
= -250 μ A
100 s
150
= 0 V
150
10
2
200
175
Figure 9-2. Maximum Safe Operating Area
10
10
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
-1
2
1
0
10
0
Figure 8. On-Resistance Variation
-50
Operation in This Area
is Limited by R
T
-V
for FQPF15P12
J
vs Temperature
, Junction Temperature [
DS
0
, Drain-Source Voltage [V]
DS(on)
※ Notes :
1. T
2. T
3. Single Pulse
10
DC
C
J
= 175
1
= 25
50
o
C
o
10 ms
C
100
1 ms
o
C]
100 s
※ Notes :
1. V
2. I
150
D
GS
= -7.5 A
= -10 V
10
Rev. A, December 2003
2
200