FQPF15P12 Fairchild Semiconductor, FQPF15P12 Datasheet - Page 3

• Manufacturer Part Number: FQPF15P12
• Description: MOSFET P-CH 120V 15A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF15P12

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 200 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 120V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 1100pF @ 25V
• Power - Max: 41W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.2 Ohms
• Forward Transconductance Gfs (max / Min): 9.5 S
• Drain-source Breakdown Voltage: - 120 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 15 A
• Power Dissipation: 41 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2003 Fairchild Semiconductor Corporation
Typical Characteristics
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
2200
2000
1800
1600
1400
1200
1000
10
10
10
10
800
600
400
200
-1
2
1
0
10
0
0
10
-1
Top :
Bottom : -4.5 V
-1
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
-10.0 V
-15.0 V
-8.0 V
-7.0 V
-6.0 V
-5.5 V
-5.0 V
V
GS
C
oss
C
-V
iss
-V
C
DS
DS
20
rss
, Drain-Source Voltage [V]
-I
, Drain-Source Voltage [V]
D
10
10
, Drain Current [A]
0
0
V
GS
= -10V
40
C
C
C
iss
oss
rss
= C
= C
= C
10
※ Notes :
※ Note : T
gs
gd
ds
10
1. 250μ s Pulse Test
2. T
1
+ C
+ C
1
C
gd
V
gd
= 25℃
GS
(C
※ Notes ;
1. V
2. f = 1 MHz
ds
J
= -20V
= 25℃
= shorted)
GS
= 0 V
60
10
10
12
10
10
10
10
10
10
8
6
4
2
0
-1
-1
2
1
0
1
0
0.0
0
2
Figure 4. Body Diode Forward Voltage
25
Figure 6. Gate Charge Characteristics
o
C
Figure 2. Transfer Characteristics
175
0.5
175℃
Variation with Source Current
o
C
25℃
10
1.0
V
4
DS
-V
-V
Q
V
and Temperature
= -96V
-55
GS
SD
DS
G
V
, Total Gate Charge [nC]
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
o
= -60V
C
DS
1.5
= -30V
2.0
20
6
2.5
※ Notes :
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
3.0
※ Note : I
30
8
DS
GS
= -40V
= 0V
D
3.5
= -15A
Rev. A, December 2003
4.0
10
40