FDD8896 Fairchild Semiconductor, FDD8896 Datasheet - Page 4

• Manufacturer Part Number: FDD8896
• Description: MOSFET N-CH 30V 94A D-PAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD8896

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.7 mOhm @ 35A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 94A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 2525pF @ 15V
• Power - Max: 80W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0057 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 17 A
• Power Dissipation: 80000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Case: TO-252
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2004 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 9. Drain to Source On Resistance vs Gate
Figure 5. Forward Bias Safe Operating Area
100
1000
80
60
40
20
100
0
0.1
10
14
12
10
1.5
8
6
4
1
1
2
Figure 7. Transfer Characteristics
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
V
DD
SINGLE PULSE
T
T
I
OPERATION IN THIS
D
J
C
LIMITED BY r
T
= MAX RATED
= 15V
= 1A
= 25
J
Voltage and Drain Current
= 175
AREA MAY BE
I
o
D
C
V
V
= 35A
GS
V
DS
o
2.0
GS
C
, GATE TO SOURCE VOLTAGE (V)
, DRAIN TO SOURCE VOLTAGE (V)
4
, GATE TO SOURCE VOLTAGE (V)
DS(ON)
T
J
= 25
o
C
2.5
6
10
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
T
C
= 25°C unless otherwise noted
T
J
3.0
= -55
8
o
C
10ms
10 s
100 s
1ms
DC
3.5
60
10
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
100
500
100
Figure 10. Normalized Drain to Source On
Figure 6. Unclamped Inductive Switching
80
60
40
20
10
1.6
1.4
1.2
1.0
0.8
0.6
0
1
0.01
Resistance vs Junction Temperature
0
Figure 8. Saturation Characteristics
-80
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80 s
T
If R = 0
t
If R
t
AV
AV
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
C
V
= 25
GS
= (L)(I
= (L/R)ln[(I
V
0
= 10V
-40
GS
o
C
V
AS
= 5V
DS
T
)/(1.3*RATED BV
0.1
0.2
J
t
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
AV
AS
, TIME IN AVALANCHE (ms)
0
*R)/(1.3*RATED BV
Capability
STARTING T
40
0.4
1
DSS
J
= 150
80
- V
STARTING T
DD
DSS
o
)
V
C
- V
GS
120
FDD8896 / FDU8896 Rev. C1
DD
0.6
= 10V, I
10
o
C)
) +1]
V
V
GS
J
V
GS
= 25
GS
160
= 4V
D
= 2.5V
= 35A
= 3V
o
C
100
200
0.8