FDD8896 Fairchild Semiconductor, FDD8896 Datasheet

MOSFET N-CH 30V 94A D-PAK

FDD8896

Manufacturer Part Number
FDD8896
Description
MOSFET N-CH 30V 94A D-PAK
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDD8896

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5.7 mOhm @ 35A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
94A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
2525pF @ 15V
Power - Max
80W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0057 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
17 A
Power Dissipation
80000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Case
TO-252
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2008 Fairchild Semiconductor Corporation
FDD8896 / FDU8896
N-Channel PowerTrench
30V, 94A, 5.7m
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
Applications
• DC/DC converters
MOSFET Maximum Ratings
Thermal Characteristics
V
V
I
E
P
T
R
R
R
DS(ON)
D
GS
J
DSS
AS
D
Symbol
, T
JC
JA
JA
STG
and fast switching speed.
G
S
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
Continuous (T
Continuous (T
Pulsed
Single Pulse Avalanche Energy (Note 2)
Power dissipation
Derate above 25
Operating and Storage Temperature
Thermal Resistance Junction to Case TO-252, TO-251
Thermal Resistance Junction to Ambient TO-252, TO-251
Thermal Resistance Junction to Ambient TO-252, 1in
(TO-252)
D-PAK
TO-252
amb
C
C
= 25
= 25
o
C
D
= 25
o
o
C, V
C, V
o
C, V
®
GS
GS
MOSFET
GS
= 10V) (Note 1)
= 4.5V) (Note 1)
Parameter
T
= 10V, with R
C
= 25°C unless otherwise noted
G D S
JA
= 52
Features
• r
• r
• High performance trench technology for extremely low
• Low gate charge
• High power and current handling capability
r
DS(ON)
DS(ON)
DS(ON)
(TO-251AA)
o
2
C/W)
copper pad area
I-PAK
= 5.7m , V
= 6.8m , V
GS
GS
= 10V, I
= 4.5V, I
-55 to 175
Ratings
Figure 4
D
D
G
0.53
1.88
= 35A
168
100
= 35A
30
94
85
17
80
52
20
D
S
April 2008
FDD8896 / FDU8896 Rev. C2
Units
W/
o
o
o
C/W
C/W
C/W
mJ
o
W
V
A
V
A
A
A
C
o
tm
C

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FDD8896 Summary of contents

Page 1

... High power and current handling capability I-PAK (TO-251AA 25°C unless otherwise noted C Parameter 10V) (Note 4.5V) (Note 10V, with C/ copper pad area April 2008 tm = 10V 35A 4.5V 35A Ratings Units Figure 4 A 168 0. -55 to 175 C o 1.88 C/W o 100 C C/W FDD8896 / FDU8896 Rev. C2 ...

Page 2

... DD GS Tape Width Quantity 13” 12mm 2500 units N/A 75 units Min Typ Max 150 250 100 1.2 - 2.5 - 0.0047 0.0057 - 0.0057 0.0068 - 0.0075 0.0092 - 2525 - - 490 - - 300 - - 2 15V DD - 2.3 3.0 = 35A - 6 1.0mA - 4 9 171 - 106 - - 143 - - 1. 1 FDD8896 / FDU8896 Rev. C2 Units ...

Page 3

... Figure 2. Maximum Continuous Drain Current RECTANGULAR PULSE DURATION ( PULSE WIDTH (s) Figure 4. Peak Current Capability CURRENT LIMITED BY PACKAGE 50 75 100 125 150 CASE TEMPERATURE ( C) C Case Temperature NOTES: DUTY FACTOR PEAK FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS: 175 - 150 - FDD8896 / FDU8896 Rev. C2 175 ...

Page 4

... Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature = (L)(I )/(1.3*RATED DSS (L/R)ln[(I *R)/(1.3*RATED +1] AS DSS DD STARTING STARTING T = 150 TIME IN AVALANCHE (ms) AV Capability 10V 0.2 0.4 0 DRAIN TO SOURCE VOLTAGE ( 10V - 120 160 JUNCTION TEMPERATURE ( C) J FDD8896 / FDU8896 Rev 100 = 2.5V 0.8 = 35A D 200 ...

Page 5

... C) Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature ISS OSS Figure 14. Gate Charge Waveforms for Constant I = 250 120 160 JUNCTION TEMPERATURE ( 15V DD WAVEFORMS IN DESCENDING ORDER 35A GATE CHARGE (nC) g Gate Current FDD8896 / FDU8896 Rev. C2 200 50 ...

Page 6

... Figure 19. Switching Time Test Circuit ©2008 Fairchild Semiconductor Corporation DUT I AS 0.01 0 Figure 16. Unclamped Energy Waveforms gs2 DD - DUT g(REF) 0 Figure 18. Gate Charge Waveforms d(ON 90 DUT V GS 50% 10% 0 Figure 20. Switching Time Waveforms BV DSS g(TOT g( g(TH OFF t d(OFF 10% 10% 90% 50% PULSE WIDTH FDD8896 / FDU8896 Rev 10V 90% ...

Page 7

... C/ never exceeded (EQ 0.01 (0.0645 Figure 21. Thermal Resistance vs Mounting dissipation. Pulse (EQ. 2) Area in Inches Squared (EQ. 3) Area in Centimeters Squared R = 33.32+ 23.84/(0.268+Area) EQ 33.32+ 154/(1.73+Area) EQ (0.645) (6.45) (64. AREA, TOP COPPER AREA in (cm ) Pad Area FDD8896 / FDU8896 Rev. C2 ...

Page 8

... PSPICE Electrical Model .SUBCKT FDD8896 rev July 2003 2.3e 2.3e-9 Cin 6 8 2.3e-9 Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Dplcap 10 5 DplcapMOD Ebreak 32.6 Eds Egs Esg Evthres Evtemp GATE Lgate 1 9 4.6e-9 Ldrain 2 5 1.0e-9 Lsource 3 7 1.7e-9 RLgate RLdrain ...

Page 9

... DPLCAP 10 RSLC2 - 6 ESG 8 EVTHRES + + 19 LGATE EVTEMP 8 RGATE + RLGATE CIN S1A S2A S1B S2B EGS EDS LDRAIN 5 RLDRAIN RSLC1 51 ISCL DBREAK 50 RDRAIN 11 DBODY MWEAK EBREAK MMED + MSTRO 17 18 LSOURCE - 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT RVTHRES FDD8896 / FDU8896 Rev. C2 DRAIN 2 SOURCE 3 ...

Page 10

... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 CTHERM5 2 RTHERM6 CTHERM6 tl CASE FDD8896 / FDU8896 Rev. C2 ...

Page 11

... Fairchild Semiconductor. The datasheet is for reference information only. The Power Franchise ® tm TinyBoost™ TinyBuck™ ® TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ ® UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ ® Definition FDD8896 / FDU8896 Rev. C2 ® Rev. I34 ...

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