FDD4141 Fairchild Semiconductor, FDD4141 Datasheet - Page 4

• Manufacturer Part Number: FDD4141
• Description: MOSFET P-CH 40V 10.8A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDD4141

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12.3 mOhm @ 12.7A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 10.8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 2775pF @ 20V
• Power - Max: 2.4W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 12.3 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 10.8 A
• Power Dissipation: 2400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 12.3Ohm
• Drain-source On-volt: 40V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: TO-252
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD4141; FDD4141TR

©2007 Fairchild Semiconductor Corporation
FDD4141 Rev.C
Typical Characteristics
Figure 7.
200
100
0.1
30
10
10
10
1
1
8
6
4
2
0
0.01
0.1
Figure 9.
0
Figure 11. Forward Bias Safe
THIS AREA IS
LIMITED BY r
I
D
= -12.7A
Switching Capability
Gate Charge Characteristics
-V
0.1
V
8
Operating Area
DS
Unclamped Inductive
DD
t
AV
, DRAIN to SOURCE VOLTAGE (V)
DS(on)
= -10V
, TIME IN AVALANCHE(ms)
Q
SINGLE PULSE
T
R
T
J
C
g
T
θ
1
, GATE CHARGE(nC)
JC
J
= MAX RATED
V
= 25
= 125
DD
= 1.8
16
1
o
= -15V
C
o
o
C
C/W
T
J
10
= 25°C unless otherwise noted
24
V
10
DD
T
J
= -20V
= 25
100
o
32
C
100us
10ms
1ms
DC
1000
100
40
4
10000
10000
1000
1000
100
100
60
50
40
30
20
10
50
Figure 10.
25
10
0
0.1
Figure 12.
-5
Limited by Package
R
Figure 8.
Current vs Case Temperature
θ
f = 1MHz
V
JC
10
GS
= 1.8
-4
V
= 0V
50
V
GS
-V
GS
Power Dissipation
Maximum Continuous Drain
10
DS
o
to Source Voltage
= -4.5V
C/W
T
= -10V
, DRAIN TO SOURCE VOLTAGE (V)
-3
C
Single Pulse Maximum
Capacitance vs Drain
,
t, PULSE WIDTH (s)
CASE TEMPERATURE (
10
75
1
-2
10
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
-1
I = I
100
25
10
0
SINGLE PULSE
R
o
C DERATE PEAK
θ
150 T
------------------------
JC
C
C
C
V
10
o
iss
oss
rss
125
C )
= 1.8
GS
125
10
–
1
= -10V
www.fairchildsemi.com
C
T
o
C
C/W
10
= 25
2
o
150
C
10
40
3