FQB2P25TM Fairchild Semiconductor, FQB2P25TM Datasheet - Page 7
![MOSFET P-CH 250V 2.3A D2PAK](/photos/26/99/269906/d2pak-2_sml.jpg)
FQB2P25TM
Manufacturer Part Number
FQB2P25TM
Description
MOSFET P-CH 250V 2.3A D2PAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Specifications of FQB2P25TM
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4 Ohm @ 1.15A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
2.3A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
8.5nC @ 10V
Input Capacitance (ciss) @ Vds
250pF @ 25V
Power - Max
3.13W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
3.15 Ohms
Forward Transconductance Gfs (max / Min)
1.2 S
Drain-source Breakdown Voltage
- 250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
- 2.3 A
Power Dissipation
3.13 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2000 Fairchild Semiconductor International
Package Dimensions
1.27
2.54 TYP
0.10
10.00
9.90
0.20
0.20
2.54 TYP
0.80
0.10
D
2
PAK
10.00
(2XR0.45)
4.50
(8.00)
(4.40)
0.20
0.20
2.40
0.10
1.30
0.80
0.50
+0.10
–0.05
0.20
0.15
+0.10
–0.05
0.10
Rev. A, April 2000