FQB2P25TM Fairchild Semiconductor, FQB2P25TM Datasheet - Page 3
![MOSFET P-CH 250V 2.3A D2PAK](/photos/26/99/269906/d2pak-2_sml.jpg)
FQB2P25TM
Manufacturer Part Number
FQB2P25TM
Description
MOSFET P-CH 250V 2.3A D2PAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Specifications of FQB2P25TM
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4 Ohm @ 1.15A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
2.3A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
8.5nC @ 10V
Input Capacitance (ciss) @ Vds
250pF @ 25V
Power - Max
3.13W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
3.15 Ohms
Forward Transconductance Gfs (max / Min)
1.2 S
Drain-source Breakdown Voltage
- 250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
- 2.3 A
Power Dissipation
3.13 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2000 Fairchild Semiconductor International
Typical Characteristics
400
300
200
100
10
10
15
12
-1
0
0
10
10
9
6
3
0
0.0
-1
-1
Figure 5. Capacitance Characteristics
Top :
Bottom : -5.5 V
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-6.0 V
V
GS
1.5
-V
-V
DS
DS
, Drain-Source Voltage [V]
-I
, Drain-Source Voltage [V]
10
10
D
0
, Drain Current [A]
0
V
C
C
C
GS
oss
rss
iss
= - 20V
3.0
V
GS
= - 10V
C
C
C
iss
oss
rss
Notes :
= C
= C
= C
1. 250 s Pulse Test
2. T
10
Note : T
10
4.5
gs
gd
ds
1
1
C
+ C
+ C
= 25
gd
gd
(C
Notes :
J
ds
1. V
2. f = 1 MHz
= 25
= shorted)
GS
= 0 V
6.0
10
10
10
10
12
10
-1
8
6
4
2
0
-1
0
0
0.2
2
0
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
Figure 2. Transfer Characteristics
0.4
1
Variation vs. Source Current
0.6
4
150
-V
-V
2
Q
and Temperature
GS
SD
25
0.8
G
, Source-Drain Voltage [V]
, Gate-Source Voltage [V]
, Total Gate Charge [nC]
150
V
DS
V
25
3
1.0
DS
= -200V
V
DS
= -125V
= -50V
6
1.2
4
-55
1.4
Notes :
Notes :
1. V
2. 250 s Pulse Test
5
1. V
2. 250 s Pulse Test
Note : I
8
DS
GS
1.6
= -40V
= 0V
D
6
= -2.3 A
1.8
Rev. A, April 2000
2.0
10
7