FQD12N20LTM Fairchild Semiconductor, FQD12N20LTM Datasheet - Page 4

• Manufacturer Part Number: FQD12N20LTM
• Description: MOSFET N-CH 200V 9A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQD12N20LTM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 280 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 21nC @ 5V
• Input Capacitance (ciss) @ Vds: 1080pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.28 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 11.6 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FQD12N20LTM; FQD12N20LTMTR

©2009 Fairchild Semiconductor Corporation
Typical Characteristics
10
1.2
1.1
1.0
0.9
0.8
10
10
10
Figure 9. Maximum Safe Operating Area
-100
-1
2
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
T
Operation in This Area
is Limited by R
V
vs. Temperature
J
DS
, Junction Temperature [
, Drain-Source Voltage [V]
0
1 0
※ Notes :
1 0
10
1. T
2. T
3. Single Pulse
1
- 1
1 0
0
C
J
= 150
= 25
DS(on)
- 5
DC
D = 0 . 5
o
0 .0 5
0 .0 2
0 .0 1
C
o
0 .1
50
C
0 .2
10 ms
Figure 11. Transient Thermal Response Curve
1 ms
100
1 0
(Continued)
o
100 s
- 4
C]
s in g le p u ls e
10
※ Notes :
1. V
2. I
t
2
1
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
D
GS
= 250 μ A
150
10 s
= 0 V
1 0
- 3
200
1 0
- 2
9.0
7.5
6.0
4.5
3.0
1.5
0.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
25
Figure 8. On-Resistance Variation
※ N o te s :
Figure 10. Maximum Drain Current
1 0
1 . Z
2 . D u ty F a c t o r , D = t
3 . T
- 1
P
DM
-50
θ J C
J M
50
- T
( t ) = 2 . 2 7 ℃ /W M a x .
vs. Case Temperature
C
= P
T
vs. Temperature
T
t
J
1
, Junction Temperature [
C
D M
t
0
, Case Temperature [ ℃ ]
1 0
2
* Z
0
75
1
θ J C
/t
2
( t )
50
100
1 0
1
100
o
C]
125
※ Notes :
1. V
2. I
150
D
GS
= 5.8 A
= 10 V
Rev. A2, January 2009
200
150