FQD12N20LTM Fairchild Semiconductor, FQD12N20LTM Datasheet - Page 2

• Manufacturer Part Number: FQD12N20LTM
• Description: MOSFET N-CH 200V 9A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQD12N20LTM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 280 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 21nC @ 5V
• Input Capacitance (ciss) @ Vds: 1080pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.28 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 11.6 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FQD12N20LTM; FQD12N20LTMTR

©2009 Fairchild Semiconductor Corporation
Electrical Characteristics
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 3.9mH, I
3. I
4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Off Characteristics
BV
/
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
t
Q
Symbol
DSS
GSSF
GSSR
d(on)
r
d(off)
f
S
SM
rr
SD
FS
BV
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
DSS
≤ 11.6A, di/dt ≤ 300A/ s, V
DSS
T
J
AS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
= 9.0A, V
DD
= 50V, R
Parameter
DD
≤ BV
G
= 25
DSS,
Starting T
Starting T
T
J
J
C
= 25°C
= 25°C
= 25°C unless otherwise noted
V
I
V
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
R
V
V
V
V
dI
D
GS
DS
DS
GS
GS
DS
GS
GS
DS
DS
DD
DS
GS
GS
GS
G
F
= 250 A, Referenced to 25°C
/ dt = 100 A/ s
= 25
= 200 V, V
= 160 V, T
= V
= 30 V, I
= 25 V, V
= 160 V, I
= 0 V, I
= 20 V, V
= -20 V, V
= 10 V, I
= 5 V, I
= 100 V, I
= 5 V
= 0 V, I
= 0 V, I
Test Conditions
GS
, I
D
D
S
S
D
D
D
= 250 A
= 4.5 A
= 9.0 A
= 11.6 A,
GS
DS
D
D
= 250 A
DS
= 4.5 A
GS
C
= 4.5 A
= 11.6 A,
= 11.6 A,
= 125°C
= 0 V
= 0 V,
= 0 V
= 0 V
(Note 4, 5)
(Note 4, 5)
(Note 4)
(Note 4)
Min
200
1.0
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0.14
0.22
0.25
11.6
0.56
Typ
830
120
190
120
128
2.8
7.6
17
15
60
16
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1080
-100
Max
0.28
0.32
100
155
390
130
250
2.0
9.0
1.5
10
22
40
21
36
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1
Rev. A2, January 2009
Units
V/°C
nA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
A
A
V
C
A
A