FDS4685 Fairchild Semiconductor, FDS4685 Datasheet - Page 3

• Manufacturer Part Number: FDS4685
• Description: MOSFET P-CH 40V 8.2A 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS4685

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 27 mOhm @ 8.2A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 8.2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 5V
• Input Capacitance (ciss) @ Vds: 1872pF @ 20V
• Power - Max: 1.2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.027 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 22 S
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 8.2 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS4685; FDS4685TR

FDS4685 Rev. C(W)
Typical Characteristics:
1.8
1.6
1.4
1.2
0.8
0.6
50
40
30
20
10
50
40
30
20
10
0
1
0
-50
1.5
0
Figure 3. On-Resistance Variation with
Figure 1. On-Region Characteristics.
V
V
I
D
GS
Figure 5. Transfer Characteristics.
GS
0.5
V
= -8.2A
= - 10V
-25
= -10V
DS
= -5V
2
-V
1
-V
T
0
DS
-6.0V
GS
J
, JUNCTION TEMPERATURE (°C)
, DRAIN TO SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
1.5
2.5
Temperature.
-4.5V
25
2
-4.0V
50
3
2.5
T
A
75
= -55°C
3.5
3
-3.5V
100
125°C
3.5
-3.0V
4
125
4
25°C
150
4.5
4.5
3
0.0001
0.001
Figure 6. Body Diode Forward Voltage Variation
0.01
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
100
0.1
2.4
2.2
1.8
1.6
1.4
1.2
0.8
10
1
2
1
0
2
0
Figure 4. On-Resistance Variation with
Figure 2. On-Resistance Variation with
V
with Source Current and Temperature.
GS
V
T
GS
A
= 0V
Drain Current and Gate Voltage.
= 25°C
= - 3.5V
0.2
-V
10
SD
Gate-to-Source Voltage.
-V
, BODY DIODE FORWARD VOLTAGE (V)
-4.0V
4
GS
T
, GATE TO SOURCE VOLTAGE (V)
A
= 125° C
-4.5V
-I
T
0.4
D
A
, DRAIN CURRENT (A)
= 125° C
20
-5.0V
0.6
6
25°C
-6.0V
30
0.8
-8.0V
-55°C
8
40
I
D
= -4.1A
1
www.fairchildsemi.com
-10V
10
50
1.2