FDS4685 Fairchild Semiconductor, FDS4685 Datasheet
FDS4685
Specifications of FDS4685
FDS4685TR
Available stocks
Related parts for FDS4685
FDS4685 Summary of contents
Page 1
... Thermal Resistance, Junction-to-Ambient θ Thermal Resistance, Junction-to-Ambient θ Thermal Resistance, Junction-to-Case θ JC Package Marking and Ordering Information Device Marking FDS4685 ©2005 Fairchild Semiconductor Corporation FDS4685 Rev. C(W) ® MOSFET Applications ■ Power management = – –4.5 V ■ Load switch GS ■ Battery protection General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’ ...
Page 2
... JC θ 50°C/W when mounted pad copper Scale letter size paper 2. Pulse Test: Pulse Width < 300 µ s, Duty Cycle < 2.0% FDS4685 Rev. C( 25°C unless otherwise noted A Test Conditions = –250 µ –250 µ A, Referenced to 25 ° C ...
Page 3
... T , JUNCTION TEMPERATURE (°C) J Figure 3. On-Resistance Variation with Temperature - 1 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics. FDS4685 Rev. C(W) 2.4 2 1.8 -3.5V 1.6 1.4 -3.0V 1.2 1 0.8 2.5 3 3.5 4 4.5 0 Figure 2. On-Resistance Variation with 0.09 0.08 0.07 0.06 0.05 0.04 ...
Page 4
... SINGLE PULSE 0.001 0.0001 0.001 Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS4685 Rev. C(W) 2500 V = -10V DS -20V 2000 -30V 1500 1000 500 C 0 ...
Page 5
... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete FDS4685 Rev. C(W) IntelliMAX™ POP™ ISOPLANAR™ Power247™ PowerEdge™ LittleFET™ PowerSaver™ MICROCOUPLER™ PowerTrench MicroFET™ ...