FDD8451 Fairchild Semiconductor, FDD8451 Datasheet - Page 4
![MOSFET N-CH 40V 9A DPAK](/photos/5/38/53880/261-dpak_sml.jpg)
FDD8451
Manufacturer Part Number
FDD8451
Description
MOSFET N-CH 40V 9A DPAK
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Type
Power MOSFETr
Datasheet
1.FDD8451.pdf
(6 pages)
Specifications of FDD8451
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
24 mOhm @ 9A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Input Capacitance (ciss) @ Vds
990pF @ 20V
Power - Max
30W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.024Ohm
Drain-source On-volt
40V
Gate-source Voltage (max)
±20V
Drain Current (max)
28A
Power Dissipation
30W
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
DPAK
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.024 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
29 S
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
28 A
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDD8451TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDD8451
Manufacturer:
FAIRCHILD
Quantity:
30 000
FDD8451 Rev. B2
Typical Characteristics
Figure 11.
100
Figure 9.
0.1
100
10
10
1
Figure 7.
1
10
1
1E-3
8
6
4
2
0
0
OPERATION IN THIS
AREA MAY BE
LIMITED BY
LIMITED BY
PACKAGE
V
DS
Forward Bias Safe Operating Area
Unclamped Inductive Switching
0.01
, DRAIN-SOURCE VOLTAGE (V)
Gate Charge Characteristics
t AV , TIME IN AVALANCHE(ms)
r
DS(on)
4
Q
T J = 150 o C
g
Capability
, GATE CHARGE(nC)
0.1
SINGLE PULSE
T J = MAX RATED
T C = 25
T J = 25 o C
V
10
DD
8
= 15V
O
C
V
1
DD
T
T J = 125 o C
J
= 25V
= 25°C unless otherwise noted
12
V
10
DD
100ms
= 20V
100us
1ms
10ms
DC
80
100
16
4
Figure 8.
Figure 10.
10000
1000
100
Figure 12. Single
3000
1000
10
30
25
20
15
10
100
5
0
10
10
0.1
-5
R JC = 4.1
SINGLE PULSE
Capacitance vs Drain to Source Voltage
40
Maximum Continuous Drain Current vs
f = 1MHz
V
V
GS
10
GS
V
= 0V
-4
DS
= 10V
T
Case Temperature
60
, DRAIN TO SOURCE VOLTAGE (V)
C
o
t, PULSE WIDTH (s)
, CASE TEMPERATURE
C/W
10
Dissipation
80
-3
Pulse Maximum Power
1
V GS =4.5V
C
C
C
T
rss
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
10
100
iss
oss
C
I = I
= 25
-2
25
o
C
120
V GS = 10V
10
o
C DERATE PEAK
175 T
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-1
www.fairchildsemi.com
150
(
140
–
o
C
10
)
C
10
0
160
10
175
40
1