FDD8451 Fairchild Semiconductor, FDD8451 Datasheet - Page 3

• Manufacturer Part Number: FDD8451
• Description: MOSFET N-CH 40V 9A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDD8451

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 990pF @ 20V
• Power - Max: 30W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.024Ohm
• Drain-source On-volt: 40V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 28A
• Power Dissipation: 30W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: DPAK
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.024 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 29 S
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 28 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD8451TR

FDD8451 Rev. B2
Typical Characteristics
Figure 3.
60
50
40
30
20
10
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
40
30
20
10
0
Figure 1.
0
-80
0
1.5
Figure 5. Transfer Characteristics
V
I
Normalized On Resistance vs Junction
D
PULSE DURATION = 80 s
DUTY CYCLE = 0.5%MAX
V
GS
GS
= 9A
-40
= 10V
V
V
T
= 10V
DS
GS
J
2.0
, JUNCTION TEMPERATURE (
, DRAIN TO SOURCE VOLTAGE (V)
On Region Characteristics
, GATE TO SOURCE VOLTAGE (V)
1
Temperature
0
T
2.5
V
J
40
GS
= 175
PULSE DURATION = 80 s
DUTY CYCLE = 0.5%MAX
= 4.5V
2
o
V
C
80
GS
V
3.0
GS
T
= 3.5V
T
J
J
= 3V
= 25°C unless otherwise noted
= -55
V
120
GS
T
3
J
= 4V
o
= 25
C
3.5
o
C)
160
o
C
200
4
4.0
3
Figure 2. Normalized
Figure 4.
1E-3
Figure 6.
0.01
100
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.1
160
120
10
80
40
1
0.0
0
0
2
V
V
GS
SD
Voltage vs Source Current
Current and Gate Voltage
0.2
= 0V
T
V
On-Resistance vs Gate to Source
, BODY DIODE FORWARD VOLTAGE (V)
V GS = 3V
Source to Drain Diode Forward
J
10
GS
= 175
, GATE TO SOURCE VOLTAGE (V)
I
D
I
D
, DRAIN CURRENT(A)
PULSE DURATION = 80 s
DUTY CYCLE = 0.5%MAX
= 10A
4
0.4
o
C
20
Voltage
0.6
On-Resistance vs Drain
V
GS
T
V
T
30
J
GS
J
= 4V
PULSE DURATION = 80 s
DUTY CYCLE = 0.5%MAX
= 175
6
= 25
= 3.5V
0.8
o
o
T
V
C
C
J
GS
40
= -55
T
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1.0
= 10V
J
= 25
o
V
8
C
GS
o
50
C
= 5V
1.2
1.4
60
10