FDD8451 Fairchild Semiconductor, FDD8451 Datasheet - Page 3
![MOSFET N-CH 40V 9A DPAK](/photos/5/38/53880/261-dpak_sml.jpg)
FDD8451
Manufacturer Part Number
FDD8451
Description
MOSFET N-CH 40V 9A DPAK
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Type
Power MOSFETr
Datasheet
1.FDD8451.pdf
(6 pages)
Specifications of FDD8451
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
24 mOhm @ 9A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Input Capacitance (ciss) @ Vds
990pF @ 20V
Power - Max
30W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.024Ohm
Drain-source On-volt
40V
Gate-source Voltage (max)
±20V
Drain Current (max)
28A
Power Dissipation
30W
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
DPAK
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.024 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
29 S
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
28 A
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDD8451TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDD8451
Manufacturer:
FAIRCHILD
Quantity:
30 000
FDD8451 Rev. B2
Typical Characteristics
Figure 3.
60
50
40
30
20
10
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
40
30
20
10
0
Figure 1.
0
-80
0
1.5
Figure 5. Transfer Characteristics
V
I
Normalized On Resistance vs Junction
D
PULSE DURATION = 80 s
DUTY CYCLE = 0.5%MAX
V
GS
GS
= 9A
-40
= 10V
V
V
T
= 10V
DS
GS
J
2.0
, JUNCTION TEMPERATURE (
, DRAIN TO SOURCE VOLTAGE (V)
On Region Characteristics
, GATE TO SOURCE VOLTAGE (V)
1
Temperature
0
T
2.5
V
J
40
GS
= 175
PULSE DURATION = 80 s
DUTY CYCLE = 0.5%MAX
= 4.5V
2
o
V
C
80
GS
V
3.0
GS
T
= 3.5V
T
J
J
= 3V
= 25°C unless otherwise noted
= -55
V
120
GS
T
3
J
= 4V
o
= 25
C
3.5
o
C)
160
o
C
200
4
4.0
3
Figure 2. Normalized
Figure 4.
1E-3
Figure 6.
0.01
100
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.1
160
120
10
80
40
1
0.0
0
0
2
V
V
GS
SD
Voltage vs Source Current
Current and Gate Voltage
0.2
= 0V
T
V
On-Resistance vs Gate to Source
, BODY DIODE FORWARD VOLTAGE (V)
V GS = 3V
Source to Drain Diode Forward
J
10
GS
= 175
, GATE TO SOURCE VOLTAGE (V)
I
D
I
D
, DRAIN CURRENT(A)
PULSE DURATION = 80 s
DUTY CYCLE = 0.5%MAX
= 10A
4
0.4
o
C
20
Voltage
0.6
On-Resistance vs Drain
V
GS
T
V
T
30
J
GS
J
= 4V
PULSE DURATION = 80 s
DUTY CYCLE = 0.5%MAX
= 175
6
= 25
= 3.5V
0.8
o
o
T
V
C
C
J
GS
40
= -55
T
www.fairchildsemi.com
1.0
= 10V
J
= 25
o
V
8
C
GS
o
50
C
= 5V
1.2
1.4
60
10