FDS6690A Fairchild Semiconductor, FDS6690A Datasheet - Page 5

• Manufacturer Part Number: FDS6690A
• Description: MOSFET N-CH 30V 11A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6690A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12.5 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 5V
• Input Capacitance (ciss) @ Vds: 1205pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0125 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 48 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS6690ATR

Typical Characteristic
0.001
0.01
0.1
0.0001
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
SINGLE PULSE
Transient thermal response will change depending on the circuit board design.
Thermal characterization performed using the conditions described in Note 1c.
Figure 12. Transient Thermal Response Curve.
0.01
0.1
t
1
, TIME (sec)
1
10
P(pk)
Duty Cycle, D = t
T
R
R
J
θJA
θJA
- T
(t) = r(t) * R
A
= 125
t
= P * R
1
100
t
2
£
θJA
/W
θJA
1
FDS6690A Rev E1 (W)
(t)
/ t
2
1000