FQD11P06TM Fairchild Semiconductor, FQD11P06TM Datasheet - Page 4

• Manufacturer Part Number: FQD11P06TM
• Description: MOSFET P-CH 60V 9.4A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQD11P06TM

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 185 mOhm @ 4.7A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 9.4A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 550pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.185 Ohms
• Forward Transconductance Gfs (max / Min): 4.9 S
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: - 9.4 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2008 Fairchild Semiconductor Corporation
Typical Characteristics
10
1.2
1.1
1.0
0.9
0.8
10
10
10
Figure 9. Maximum Safe Operating Area
-100
-1
2
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
T
-V
vs. Temperature
J
, Junction Temperature [
DS
Operation in This Area
is Limited by R
0
, Drain-Source Voltage [V]
※
1 0
1 0
1 0
1. T
2. T
3. Single Pulse
Notes :
-1
-2
1 0
0
C
J
= 150
= 25
-5
o
D = 0 .5
0 .0 2
0 . 0 1
DS(on)
0 .0 5
C
o
10
0 .2
0 .1
50
C
DC
1
10 ms
Figure 11. Transient Thermal Response Curve
100
s in g le p u ls e
1 0
(Continued)
1 ms
o
-4
C]
※
1. V
2. I
t
Notes :
1
D
100 s
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
GS
= -250 µ A
150
= 0 V
1 0
-3
200
10
2
1 0
-2
2.5
2.0
1.5
1.0
0.5
0.0
10
8
6
4
2
0
-100
25
※
1 . Z
2 . D u ty F a c to r , D = t
3 . T
Figure 8. On-Resistance Variation
N o te s :
1 0
Figure 10. Maximum Drain Current
θ J C
J M
-1
P
- T
-50
( t ) = 3 .2 8
DM
C
50
= P
vs. Case Temperature
T
D M
vs. Temperature
J
T
t
, Junction Temperature [
1
℃
* Z
C
t
1 0
0
, Case Temperature [ ]
2
/W M a x .
1
/t
θ J C
0
2
75
( t)
50
100
1 0
1
100
℃
o
C]
※
125
1. V
2. I
Notes :
150
D
GS
= -4.7 A
= -10 V
Rev. C5, October 2008
200
150