FQD11P06TM Fairchild Semiconductor, FQD11P06TM Datasheet - Page 2

• Manufacturer Part Number: FQD11P06TM
• Description: MOSFET P-CH 60V 9.4A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQD11P06TM

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 185 mOhm @ 4.7A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 9.4A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 550pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.185 Ohms
• Forward Transconductance Gfs (max / Min): 4.9 S
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: - 9.4 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2009 Fairchild Semiconductor Corporation
Elerical Characteristics
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 2.1mH, I
3. I
4. Pulse Test : Pulse width
5. Essentially independent of operating temperature
Off Characteristics
BV
/
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
t
Q
Symbol
DSS
GSSF
GSSR
d(on)
r
d(off)
f
S
SM
rr
SD
FS
BV
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
DSS
DSS
-11.4A, di/dt
T
J
AS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
= -9.4A, V
300A/ s, V
DD
300 s, Duty cycle
= -25V, R
DD
Parameter
BV
G
DSS,
= 25
Starting T
2%
Starting T
T
C
J
= 25°C
= 25°C unless otherwise noted
J
= 25°C
V
I
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
R
V
V
V
V
dI
D
GS
DS
DS
GS
GS
DS
GS
DS
DS
DD
DS
GS
GS
GS
G
F
= -250 A, Referenced to 25°C
/ dt = 100 A/ s
= 25
= -60 V, V
= -48 V, T
= V
= -30 V, I
= -25 V, V
= -48 V, I
= 0 V, I
= -25 V, V
= 25 V, V
= -10 V, I
= -30 V, I
= -10 V
= 0 V, I
= 0 V, I
Test Conditions
GS
, I
D
S
S
D
D
= -250 A
D
= -9.4 A
= -11.4 A,
D
D
DS
C
GS
= -250 A
GS
DS
= -4.7 A
= -11.4 A,
= -4.7 A
= -5.7 A,
= 125°C
= 0 V
= 0 V
= 0 V
= 0 V,
(Note 4, 5)
(Note 4, 5)
(Note 4)
(Note 4)
Min
-2.0
-60
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
-0.07
0.15
0.26
Typ
420
195
4.9
6.5
2.0
6.3
45
40
15
45
13
83
--
--
--
--
--
--
--
--
--
0.185
-37.6
Max
-100
100
-4.0
550
250
100
-9.4
-4.0
-10
60
25
90
40
17
-1
--
--
--
--
--
--
--
Rev. C6,January 2009
Units
V/°C
nA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
A
V
A
C
A
A