IRLS630A Fairchild Semiconductor, IRLS630A Datasheet - Page 2

• Manufacturer Part Number: IRLS630A
• Description: MOSFET N-CH 200V 6.5A TO-220F
• Manufacturer: Fairchild Semiconductor

Specifications of IRLS630A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 400 mOhm @ 3.25A, 5V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 6.5A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 5V
• Input Capacitance (ciss) @ Vds: 755pF @ 25V
• Power - Max: 36W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRLS630A
-BV/-T
Symbol
Electrical Characteristics
Source-Drain Diode Ratings and Characteristics
Symbol
Notes ;
% Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
& L=2mH, I
' I
+ Pulse Test : Pulse Width = 250#s, Duty Cycle * 2%
, Essentially Independent of Operating Temperature
BV
V
R
t
t
V
I
I
C
C
GS(th)
C
Q
Q
I
Q
DS(on)
d(on)
d(off)
Q
GSS
DSS
g
I
SM
t
t
t
S
SD
rr
oss
SD
rss
DSS
iss
fs
r
f
gs
gd
rr
g
*9A, di/dt*220A/#s, V
J
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain((Miller() Charge
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
AS
=6.5A, V
Characteristic
DD
Characteristic
=50V, R
DD
*BV
G
=27
DSS
)
, Starting T
, Starting T
(T
C
=25$ unless otherwise specified)
%
+
J
J
=25$
=25$
Min.
Min.
200
1.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ.
Typ.
0.18
18.6
0.78
580
158
4.5
3.5
8.3
90
44
30
--
--
--
--
--
--
--
--
--
--
8
6
9
Max. Units
Max. Units
-100
100
100
755
115
2.0
0.4
1.5
10
32
55
25
20
70
30
27
--
--
--
--
--
--
--
9
V/$
nA
#A
nC
#C
pF
ns
ns
)
V
V
A
S
V
V
I
V
V
V
V
V
V
V
V
V
R
V
I
See Fig 6 & Fig 12
Integral reverse pn-diode
in the MOSFET
T
T
di
D
D
J
J
GS
DS
GS
GS
DS
DS
GS
DS
GS
DD
DS
G
=250#A
=9A
F
=25$,I
=25$,I
/dt=100A/#s
=6)
=V
=200V
=160V,T
=40V,I
=160V,V
=0V,I
=20V
=-20V
=5V,I
=0V,V
=100V,I
See Fig 13
Test Condition
Test Condition
GS
See Fig 5
POWER MOSFET
, I
D
D
S
F
DS
=250#A
=3.25A
D
D
=6.5A,V
=9A
N-CHANNEL
=3.25A
=250#A
D
=25V,f =1MHz
C
GS
=9A,
See Fig 7
=125$
=5V,
GS
=0V
+ ,
+ ,
+
+
+