IRLS630A Fairchild Semiconductor, IRLS630A Datasheet

MOSFET N-CH 200V 6.5A TO-220F

IRLS630A

Manufacturer Part Number
IRLS630A
Description
MOSFET N-CH 200V 6.5A TO-220F
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of IRLS630A

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
400 mOhm @ 3.25A, 5V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
6.5A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
27nC @ 5V
Input Capacitance (ciss) @ Vds
755pF @ 25V
Power - Max
36W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRLS630A
Manufacturer:
FAIRCHILD
Quantity:
12 500
Advanced Power MOSFET
Thermal Resistance
FEATURES
 Logic-Level Gate Drive
 Avalanche Rugged Technology
 Rugged Gate Oxide Technology
 Lower Input Capacitance
 Improved Gate Charge
 Extended Safe Operating Area
 Lower Leakage Current : 10 #A (Max.) @ V
 Lower R
Absolute Maximum Ratings
T
Symbol
Symbol
J
dv/dt
R
R
V
V
E
E
I
I
P
, T
I
T
DM
DSS
AR
D
GS
AS
AR
JC
JA
D
L
STG
DS(ON)
Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8( from case for 5-seconds
: 0.335! (Typ.)
Junction-to-Ambient
Junction-to-Case
Characteristic
Characteristic
C
=25$)
C
C
=25$)
=100$)
DS
= 200V
%
&
%
%
'
Typ.
--
--
- 55 to +150
Value
"20
0.29
300
200
BV
R
I
6.5
4.1
6.5
3.6
32
56
36
TO-220F
D
1.Gate 2. Drain 3. Source
5
1
DS(on)
IRLS630A
2
DSS
= 6.5 A
3
3.47
62.5
Max.
= 0.4 !
= 200 V
o
Units
Units
W/$
C/W
V/ns
mJ
mJ
$
W
V
A
A
V
A
Rev. A

Related parts for IRLS630A

IRLS630A Summary of contents

Page 1

... Linear Derating Factor Operating Junction and STG Storage Temperature Range Maximum Lead Temp. for Soldering T L Purposes, 1/8( from case for 5-seconds Thermal Resistance Symbol Characteristic R Junction-to-Case JC R Junction-to-Ambient JA IRLS630A BV DSS R DS(on 6 TO-220F = 200V 1.Gate 2. Drain 3. Source Value 200 =25$) 6.5 C =100$) 4 ...

Page 2

... IRLS630A Electrical Characteristics Symbol Characteristic BV Drain-Source Breakdown Voltage DSS -BV/-T Breakdown Voltage Temp. Coeff Gate Threshold Voltage GS(th) Gate-Source Leakage , Forward I GSS Gate-Source Leakage , Reverse I Drain-to-Source Leakage Current DSS Static Drain-Source R DS(on) On-State Resistance g Forward Transconductance fs C Input Capacitance iss C Output Capacitance ...

Page 3

... Fig 3. On-Resistance vs. Drain Current Drain Current [A] D Fig 5. Capacitance vs. Drain-Source Voltage iss oss iss rss oss C rss Drain-Source Voltage [V] DS Fig 2. Transfer Characteristics Fig 4. Source-Drain Diode Forward Voltage Fig 6. Gate Charge vs. Gate-Source Voltage = IRLS630A @ Gate-Source Voltage [ Source-Drain Voltage [ Total Gate Charge [nC] ...

Page 4

... IRLS630A Fig 7. Breakdown Voltage vs. Temperature Junction Temperature [ J Fig 9. Max. Safe Operating Area DS(on Drain-Source Voltage [ D=0.5 0.2 0.1 0. 0.02 0.01 single pulse - Square Wave Pulse Duration 1 Fig 8. On-Resistance vs. Temperature Fig 10. Max. Drain Current vs. Case Temperature Fig 11. Thermal Response @ Notes : 1. Z (t)=1. ...

Page 5

... Fig 13. Resistive Switching Test Circuit & Waveforms V out DUT 5V Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms Vary t to obtain required peak DUT Same Type as DUT DUT R 2 Current Sampling ( Resistor out 90 0.5 rated 10 d(on DSS IRLS630A Charge d(off off BV DSS 1 ---- 2 -------------------- DSS (t) DS Time t p ...

Page 6

... IRLS630A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT Driver Driver ) DUT ) DUT ) + Same Type as DUT • dv/dt controlled controlled by Duty Factor (D( • Gate Pulse Width -------------------------- D = Gate Pulse Period , Body Diode Forward Current FM di/ Body Diode Reverse Current Body Diode Recovery dv/dt ...

Page 7

... TM TM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS ...

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