FQPF3P20 Fairchild Semiconductor, FQPF3P20 Datasheet - Page 6

• Manufacturer Part Number: FQPF3P20
• Description: MOSFET P-CH 200V 2.2A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF3P20

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.7 Ohm @ 1.1A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 2.2A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 8nC @ 10V
• Input Capacitance (ciss) @ Vds: 250pF @ 25V
• Power - Max: 32W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FQPF3P20
6
( Driver )
( Driver )
( DUT )
( DUT )
( DUT )
( DUT )
V
V
V
V
I
I
GS
GS
S
S
DS
DS
V
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
GS
R
G
DUT
Driver
I
I
FM
FM
I
I
D =
D =
D =
S
S
, Body Diode Forward Current
, Body Diode Forward Current
Forward Voltage Drop
Forward Voltage Drop
--------------------------
--------------------------
--------------------------
Gate Pulse Period
Gate Pulse Period
Gate Pulse Period
Gate Pulse Width
Gate Pulse Width
Gate Pulse Width
Body Diode
Body Diode
Compliment of DUT
Body Diode Recovery dv/dt
Body Diode Recovery dv/dt
V
• dv/dt controlled by R
• I
+
DS
_
(N-Channel)
V
V
S
Body Diode Reverse Current
Body Diode Reverse Current
f
f
controlled by pulse period
I
I
RM
RM
L L
G
di/dt
di/dt
V
V
V
10V
10V
DD
DD
DD
QFET P-CHANNEL