FQPF3P20 Fairchild Semiconductor, FQPF3P20 Datasheet - Page 3

• Manufacturer Part Number: FQPF3P20
• Description: MOSFET P-CH 200V 2.2A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF3P20

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.7 Ohm @ 1.1A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 2.2A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 8nC @ 10V
• Input Capacitance (ciss) @ Vds: 250pF @ 25V
• Power - Max: 32W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

QFET P-CHANNEL
10
10
400
300
200
100
10
8
6
4
2
0
-1
0
0
10
10
0
-1
-1
Top :
Bottom : -5.5 V
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 3. On-Resistance vs. Drain Current
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-6.0 V
V
GS
Fig 1. Output Characteristics
2
-V
-V
DS
DS
, Drain-Source Voltage [V]
-I
, Drain-Source Voltage [V]
D
10
10
, Drain Current [A]
0
0
V
GS
C
C
C
oss
iss
rss
= - 20V
4
V
GS
= - 10V
C
C
C
iss
oss
rss
¡Ø Note :
= C
= C
= C
10
¡Ø Note : T
1. 250¥ìs Pulse Test
2. T
10
6
gs
gd
1
ds
1
C
+ C
+ C
= 25¡É
gd
gd
(C
¡Ø Note ;
J
1. V
2. f = 1 MHz
= 25¡É
ds
= shorted)
GS
= 0 V
8
10
10
10
10
12
10
-1
-1
8
6
4
2
0
0
0
0.4
2
0
Fig 6. Gate Charge vs. Gate-Source Voltage
Fig 4. Source-Drain Diode Forward Voltage
150¡É
1
0.8
Fig 2. Transfer Characteristics
4
-V
-V
25¡É
2
Q
SD
GS
25¡É
1.2
G
, Source-Drain Voltage [V]
, Total Gate Charge [nC]
, Gate-Source Voltage [V]
150¡É
V
DS
V
DS
V
= -160V
3
DS
= -100V
= -40V
1.6
6
4
-55¡É
2.0
¡Ø Note
¡Ø Note :
5
1. V
2. 250¥ìs Pulse Test
1. V
2. 250¥ìs Pulse Test
¡Ø Note : I
8
GS
DS
= -40V
= 0V
2.4
D
FQPF3P20
6
= -2.8 A
2.8
10
7
3