FDT458P Fairchild Semiconductor, FDT458P Datasheet - Page 4

• Manufacturer Part Number: FDT458P
• Description: MOSFET P-CH 30V 3.4A SOT-223
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDT458P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 130 mOhm @ 3.4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.4A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 3.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 205pF @ 15V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.13 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 3 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.4 A
• Power Dissipation: 3000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 3.4A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 105mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: 1.8V
• Transistor Case Style: SOT-223
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
10
0.01
100
8
6
4
2
0
0.1
10
Figure 9. Maximum Safe Operating Area.
1
0
0.001
Figure 7. Gate Charge Characteristics.
0.1
0.01
I
R
0.1
D
1
= -3.4A
DS(ON)
SINGLE PULSE
0.001
R
V
JA
T
GS
A
= 110
LIMIT
= 25
= -10V
1
o
o
D = 0.5
C/W
C
0.2
0.05
0.02
-V
0.1
0.01
Single Pulse
D S
Q
, DRAIN-SOURCE VOLTAGE (V)
g
, GATE CHARGE (nC)
1
2
0.01
DC
V
DS
Figure 11. Transient Thermal Response Curve.
10s
= -5V
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
3
1s
100ms
-15V
10
10ms
1m
4
0.1
-10V
100 s
5
100
t
1
, TIME (sec)
1
300
250
200
150
100
50
200
160
120
0
80
40
0.0001
0
0
Figure 8. Capacitance Characteristics.
C
RSS
Figure 10. Single Pulse Maximum
0.001
5
C
OSS
-V
DS
Power Dissipation.
10
, DRAIN TO SOURCE VOLTAGE (V)
0.01
SINGLE PULSE TIME (SEC)
10
C
ISS
0.1
15
P(pk)
1
Duty Cycle, D = t
T
R
100
R
J
JA
- T
20
JA
(t) = r(t) + R
A
t
= 110 °C/W
1
10
= P * R
t
SINGLE PULSE
R
2
J A
f = 1 MHz
V
T
GS
A
= 110
FDT458P Rev. B(W)
25
= 25
= 0 V
100
JA
1
JA
(t)
o
/ t
o
C / W
C
2
1000
1000
30