FDT458P Fairchild Semiconductor, FDT458P Datasheet - Page 2

• Manufacturer Part Number: FDT458P
• Description: MOSFET P-CH 30V 3.4A SOT-223
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDT458P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 130 mOhm @ 3.4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.4A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 3.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 205pF @ 15V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.13 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 3 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.4 A
• Power Dissipation: 3000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 3.4A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 105mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: 1.8V
• Transistor Case Style: SOT-223
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes:
1. R
2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
Electrical Characteristics
Symbol
Off Characteristics
BV
I
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
DSS
GSSF
GSSR
D(on)
S
the drain pins. R
d(on)
r
d(off)
f
FS
BV
V
DS(on)
iss
oss
rss
GS(th)
g
gs
gd
SD
JA
DSS
GS(th)
T
T
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
DSS
J
J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
JC
is guaranteed by design while R
a) 42°C/W when
mounted on a 1in
pad of 2 oz copper
Parameter
(Note 2)
2
(Note 2)
CA
is determined by the user's board design.
V
I
V
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
T
D
D
A
GS
DS
GS
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
b) 95°C/W when
= –250 A, Referenced to 25 C
= –250 A, Referenced to 25 C
= 25°C unless otherwise noted
=–10 V, I
mounted on a .0066
in
copper
= 0 V, I
= –24 V, V
= –25 V,
= –25 V, V
= V
= –10 V,
= –4.5 V,
= –10 V,
= –5 V,
= –15 V,
= –15 V,
= –10 V,
= –15 V,
= –10 V
= 0 V, I
2
pad of 2 oz
Test Conditions
GS
, I
D
D
D
= –250 A
S
= –250 A
=–3.4 A, T
= –2.5 A
V
I
I
V
I
GS
DS
D
D
D
V
I
I
R
DS
D
D
= –3.4 A
= –2.7 A
GS
GEN
= –3.4 A,
DS
= –3.4 A
= –1 A,
= 0 V
= 0 V
= 0 V
= 0 V,
= –5 V
= 6
J
=125 C
(Note 2)
Min
–30
–1
–5
c) 110°C/W when mounted on a
minimum pad.
–1.8
Typ
12.5
–0.8
–23
105
157
147
205
4.5
2.5
0.7
55
26
11
4
3
2
1
Max Units
–100
–2.5
–1.2
100
130
200
210
3.5
–1
–3
23
20
9
4
FDT458P Rev. B(W)
mV/ C
mV/ C
m
nA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
A
S
A
V
A