FQP3P20 Fairchild Semiconductor, FQP3P20 Datasheet - Page 4

• Manufacturer Part Number: FQP3P20
• Description: MOSFET P-CH 200V 2.8A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQP3P20

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.7 Ohm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 2.8A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 8nC @ 10V
• Input Capacitance (ciss) @ Vds: 250pF @ 25V
• Power - Max: 52W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 2.7 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 1.23 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.8 A
• Power Dissipation: 52000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2000 Fairchild Semiconductor International
Typical Characteristics
1.2
1.1
1.0
0.9
0.8
10
10
10
10
10
-100
Figure 9. Maximum Safe Operating Area
-1
-2
2
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
-V
T
vs. Temperature
J
, Junction Temperature [
DS
0
, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
1 0
1 0

Notes :
1 0
10
1. T
2. T
3. Single Pulse
1
- 1
- 2
0
1 0
C
J
= 150
= 25
- 5
D = 0 .5
0 .0 2
0 .0 5
0 .0 1
o
C
0 .2
0 .1
50
o
C
DS(on)
DC
Figure 11. Transient Thermal Response Curve
10 ms
100
1 0
(Continued)
o
C]
- 4
s i n g le p u ls e
1 ms
10

Notes :
t
1. V
2. I
2
1
D
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
G S
= -250  A
150
= 0 V
100 s
1 0
- 3
200
1 0
- 2
2.5
2.0
1.5
1.0
0.5
0.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
25

N o te s :
Figure 8. On-Resistance Variation
1 0
Figure 10. Maximum Drain Current
1 . Z
2 . D u ty F a c to r , D = t
3 . T
- 1
P
-50

J C
J M
DM
50
- T
( t) = 2 .4  /W M a x .
vs. Case Temperature
C
= P
T
vs. Temperature
T
J
t
, Junction Temperature [
1
C
D M
0
t
, Case Temperature [
]
1 0
2
* Z
0
75
1

J C
/t
2
( t)
50
100
1 0
1
100
o
C]

Notes :
125
1. V
2. I
150
D
GS
= -1.4 A
= -10 V
Rev. A, April 2000
150
200