FQP3P20 Fairchild Semiconductor, FQP3P20 Datasheet

MOSFET P-CH 200V 2.8A TO-220

FQP3P20

Manufacturer Part Number
FQP3P20
Description
MOSFET P-CH 200V 2.8A TO-220
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQP3P20

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.7 Ohm @ 1.4A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
2.8A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
8nC @ 10V
Input Capacitance (ciss) @ Vds
250pF @ 25V
Power - Max
52W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
2.7 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
1.23 S
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
2.8 A
Power Dissipation
52000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQP3P20
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
FQP3P20
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2000 Fairchild Semiconductor International
FQP3P20
200V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters.
Absolute Maximum Ratings 
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
DSS
GSS
AS
AR
D
Symbol
Symbol
, T
JC
CS
JA
STG
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
G
D
S
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
Parameter
Parameter
= 25°C)
 T
C
FQP Series
C
C
TO-220
= 25°C unless otherwise noted
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• -2.8A, -200V, R
• Low gate charge ( typical 6.0 nC)
• Low Crss ( typical 7.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Typ
0.5
--
--
DS(on)
G
! ! ! !
! ! ! !
-55 to +150
FQP3P20
= 2.7
-1.77
-11.2
-200
0.42
-2.8
-2.8
-5.5
150
300
5.2
52
30
! ! ! !
! ! ! !
! ! ! !
! ! ! !
D
S

 


 


 


 





 
 
@V
   
   
Max
62.5
2.4
--
GS
QFET
QFET
QFET
QFET
= -10 V
April 2000
Units
W/°C
Units
°CW
°CW
°CW
V/ns
mJ
mJ
Rev. A, April 2000
°C
°C
W
V
A
A
A
V
A
TM

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FQP3P20 Summary of contents

Page 1

... C Parameter April 2000 QFET QFET QFET QFET = 2 -10 V DS(on FQP3P20 Units -200 V -2.8 A -1.77 A -11.2 A 30 V 150 mJ -2.8 A 5.2 mJ -5.5 V/ 0.42 W/°C -55 to +150 °C 300 °C Typ Max Units -- 2.4 °CW 0.5 -- °CW -- 62.5 °CW Rev. A, April 2000 TM ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 29mH -2.8A -50V -2.8A, di/dt  300A DSS, 4. Pulse Test : Pulse width  300 s, Duty cycle  2% 5. Essentially independent of operating temperature ©2000 Fairchild Semiconductor International T = 25°C unless otherwise noted C Test Conditions -250 -250 A, Referenced to 25° -200 ...

Page 3

... Drain Current [A] D Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 400 300 C iss C oss 200 C rss 100 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2000 Fairchild Semiconductor International Notes : 1. 250  s Pulse Test = 10V Note : 0.4 Figure 4. Body Diode Forward Voltage 12 ...

Page 4

... Operation in This Area is Limited by R DS(on Notes : 150 Single Pulse - Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2000 Fairchild Semiconductor International (Continued) 2.5 2.0 1.5 1.0  Notes : 0 -250  0.0 100 150 200 -100 o C] 3.0 2.5 100 2 1.5 1.0 0.5 0 Figure 11 ...

Page 5

... Resistive Switching Test Circuit & Waveforms -10V -10V Unclamped Inductive Switching Test Circuit & Waveforms -10V -10V ©2000 Fairchild Semiconductor International Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT -10V -10V DUT DUT DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2000 Fairchild Semiconductor International + + DUT DUT Driver Driver Compliment of DUT Compliment of DUT (N-Channel) (N-Channel) • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 7

... Package Dimensions 9.90 (8.70) ø3.60 1.27 0.10 2.54TYP [2.54 ] 0.20 10.00 ©2000 Fairchild Semiconductor International TO-220 0.20 0.10 1.52 0.10 0.80 0.10 2.54TYP [2.54 ] 0.20 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Rev. A, April 2000 ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS™ FACT™ FACT Quiet Series™ ® FAST FASTr™ ...

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