FQP7P06 Fairchild Semiconductor, FQP7P06 Datasheet - Page 3

• Manufacturer Part Number: FQP7P06
• Description: MOSFET P-CH 60V 7A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQP7P06

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 410 mOhm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 8.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 295pF @ 25V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.41 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 4 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 7 A
• Power Dissipation: 45000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 7A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 410mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
600
500
400
300
200
100
10
10
10
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-1
0
1
0
10
10
0
Figure 5. Capacitance Characteristics
-1
-1
Figure 3. On-Resistance Variation vs.
Top :
Bottom : - 4.5 V
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
- 15.0 V
- 10.0 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
V
4
GS
-V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
8
-I
D
10
, Drain Current [A]
C
10
C
C
0
iss
V
oss
rss
0
GS
= - 20V
12
V
GS
= - 10V
16
C
C
C
iss
oss
rss
※ Notes :
= C
= C
= C
1. 250μ s Pulse Test
2. T
10
※ Note : T
gs
gd
ds
1
C
+ C
+ C
= 25℃
10
※ Notes :
gd
gd
1
20
1. V
2. f = 1 MHz
(C
J
ds
= 25℃
GS
= shorted)
= 0 V
24
10
10
10
10
10
10
12
10
8
6
4
2
0
-1
-1
1
0
1
0
0.0
0
2
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
25℃
0.2
175℃
Figure 2. Transfer Characteristics
0.4
1
Variation vs. Source Current
175℃
0.6
4
-V
-V
0.8
2
Q
-55℃
SD
and Temperature
GS
G
, Source-Drain Voltage [V]
, Total Gate Charge [nC]
, Gate-Source Voltage [V]
25℃
1.0
1.2
3
V
DS
V
1.4
DS
= -48V
6
= -30V
1.6
4
1.8
2.0
※ Notes :
5
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
※ Note : I
8
DS
2.2
GS
= -30V
= 0V
D
2.4
6
= -7.0 A
2.6
Rev. A2. May 2001
2.8
10
7