FQP7P06 Fairchild Semiconductor, FQP7P06 Datasheet - Page 2
![MOSFET P-CH 60V 7A TO-220](/photos/5/30/53099/261-to-220-3_sml.jpg)
FQP7P06
Manufacturer Part Number
FQP7P06
Description
MOSFET P-CH 60V 7A TO-220
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQP7P06.pdf
(8 pages)
Specifications of FQP7P06
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
410 mOhm @ 3.5A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
8.2nC @ 10V
Input Capacitance (ciss) @ Vds
295pF @ 25V
Power - Max
45W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.41 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
4 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
7 A
Power Dissipation
45000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
7A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
410mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FQP7P06
Manufacturer:
Fairchild Semiconductor
Quantity:
1 918
Company:
Part Number:
FQP7P06
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
FQP7P06
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2001 Fairchild Semiconductor Corporation
Elerical Characteristics
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 2.1mH, I
3. I
4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Off Characteristics
BV
/
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
t
Q
Symbol
DSS
GSSF
GSSR
d(on)
r
d(off)
f
S
SM
rr
SD
FS
BV
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
DSS
≤ -7.0A, di/dt ≤ 300A/ s, V
DSS
T
J
AS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
= -7.0A, V
DD
= -25V, R
DD
Parameter
≤ BV
G
= 25
DSS,
Starting T
Starting T
T
C
= 25°C unless otherwise noted
J
= 25°C
J
= 25°C
V
I
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
R
V
V
V
V
dI
D
GS
DS
DS
GS
GS
DS
GS
DS
DS
DD
DS
GS
GS
GS
G
F
= -250 A, Referenced to 25°C
/ dt = 100 A/ s
= 25
= -60 V, V
= -48 V, T
= V
= -30 V, I
= -25 V, V
= -48 V, I
= 0 V, I
= -25 V, V
= 25 V, V
= -10 V, I
= -30 V, I
= -10 V
= 0 V, I
= 0 V, I
Test Conditions
GS
, I
D
S
S
D
= -250 A
D
D
= -7.0 A
= -7.0 A,
D
D
DS
C
GS
= -250 A
GS
DS
= -3.5 A
= -7.0 A,
= -3.5 A
= -3.5 A,
= 150°C
= 0 V
= 0 V
= 0 V
= 0 V,
(Note 4, 5)
(Note 4, 5)
(Note 4)
(Note 4)
Min
-2.0
-60
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-0.07
0.32
0.23
Typ
225
110
4.0
7.5
6.3
1.6
3.1
25
50
25
77
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7
Max
-100
0.41
100
-4.0
295
145
-7.0
-4.0
110
-10
8.2
-28
32
25
25
60
-1
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Rev. A2. May 2001
Units
V/°C
nA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
A
A
V
C
A
A