FDG328P Fairchild Semiconductor, FDG328P Datasheet - Page 4

• Manufacturer Part Number: FDG328P
• Description: MOSFET P-CH 20V 1.5A SC70-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDG328P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 145 mOhm @ 1.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.5A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 337pF @ 10V
• Power - Max: 480mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.145 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 5 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 1.5 A
• Power Dissipation: 750 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

5
4
3
2
1
0
0.01
100
Figure 9. Maximum Safe Operating Area.
0.1
10
0
Figure 7. Gate Charge Characteristics.
1
0.1
I
D
0.001
= -1.5A
0.01
SINGLE PULSE
R
R
0.1
V
DS(ON)
JA
0.0001
T
1
GS
A
= 260
= 25
= -4.5V
LIMIT
1
o
o
C/W
C
D = 0.5
-V
DS
0.2
, DRAIN-SOURCE VOLTAGE (V)
0.1
0.05
Q
0.02
1
g
0.01
, GATE CHARGE (nC)
DC
2
0.001
1s
SINGLE PULSE
100ms
Figure 11. Transient Thermal Response Curve.
10ms
V
DS
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
3
= -
1ms
10
0.01
-15V
100 s
4
-10V
100
5
0.1
t
1
, TIME (sec)
30
24
18
12
0.0001
600
500
400
300
200
100
6
0
0
Figure 8. Capacitance Characteristics.
0
1
Figure 10. Single Pulse Maximum
0.001
-V
Power Dissipation.
5
DS
SINGLE PULSE TIME (SEC)
0.01
, DRAIN TO SOURCE VOLTAGE (V)
10
C
C
C
ISS
OSS
RSS
0.1
10
Duty Cycle, D = t
P(pk)
T
R
R
J
JA
- T
JA
(t) = r(t) + R
100
A
1
= 260 °C/W
= P * R
t
1
t
2
SINGLE PULSE
R
15
JA
T
JA
A
10
1
= 260
JA
(t)
FDG328P Rev C(W)
= 25
/ t
V
f = 1MHz
2
GS
o
o
C/W
C
= 0 V
1000
100
20